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240802s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202405233
|2 doi
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|a pubmed25n1251.xml
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|a (DE-627)NLM375784780
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|a (NLM)39091054
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|a DE-627
|b ger
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|a eng
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| 100 |
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|a Zhang, Kai
|e verfasserin
|4 aut
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|a Spatially Resolved Light-Induced Ferroelectric Polarization in α-In2Se3/Te Heterojunctions
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 03.10.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Light-induced ferroelectric polarization in 2D layered ferroelectric materials holds promise in photodetectors with multilevel current and reconfigurable capabilities. However, translating this potential into practical applications for high-density optoelectronic information storage remains challenging. In this work, an α-In2Se3/Te heterojunction design that demonstrates spatially resolved, multilevel, nonvolatile photoresponsivity is presented. Using photocurrent mapping, the spatially localized light-induced poling state (LIPS) is visualized in the junction region. This localized ferroelectric polarization induced by illumination enables the heterojunction to exhibit enhanced photoresponsivity. Unlike previous reports that observe multilevel polarization enhancement in electrical resistance, the device shows nonvolatile photoresponsivity enhancement under illumination. After polarization saturation, the photocurrent increases up to 1000 times, from 10-12 to 10-9 A under the irradiation of a 520 nm laser with a power of 1.69 nW, compared to the initial state in a self-driven mode. The photodetector exhibits high detectivity of 4.6×1010 Jones, with a rise time of 27 µs and a fall time of 28 µs. Furthermore, the device's localized poling characteristics and multilevel photoresponse enable spatially multiplexed optical information storage. These results advance the understanding of LIPS in 2D ferroelectric materials, paving the way for optoelectronic information storage technologies
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|a Journal Article
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|a 2D ferroelectrics
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4 |
|a light‐induced ferroelectric polarization
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4 |
|a nonvolatile photoresponsivity
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| 650 |
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4 |
|a optical information storage
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| 700 |
1 |
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|a Li, Haozhe
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Mu, Haoran
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Pu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Tongsheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yuan, Jian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Weiqiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Wenzhi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Guangyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bao, Qiaoliang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lin, Shenghuang
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 38 vom: 01. Sept., Seite e2405233
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:38
|g day:01
|g month:09
|g pages:e2405233
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202405233
|3 Volltext
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