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|a 10.1002/adma.202401698
|2 doi
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|a pubmed24n1538.xml
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|a (NLM)39075821
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|a DE-627
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|a eng
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|a Li, Guang
|e verfasserin
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|a Boosting All-Perovskite Tandem Solar Cells by Revitalizing the Buried Tin-Lead Perovskite Interface
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 18.09.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Narrow-bandgap (NBG) mixed tin-lead (Sn-Pb) perovskite solar cells (PSCs) serve as crucial top subcells in all-perovskite tandem solar cells (TSCs). However, the prevalent use of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) hole transport layers (HTLs) in NBG PSCs compromises device efficiency and stability. To address this, the study proposes a revitalizing strategy for the buried interface of Sn-Pb perovskites by directly immersing acetylcholine chloride (ACh) into PEDOT: PSS. ACh acts as a proficient "diver," not only modulating the bottom PEDOT: PSS HTLs but also facilitating the reconstruction of the buried interface and significantly enhancing the quality of the top perovskite layers. This intervention with ACh prevents Sn2+ oxidation, mitigates buried defects, and encourages the growth of large, densely packed grains within Sn-Pb perovskites. Consequently, the optimized NBG PSCs exhibit significantly improved hole transport and reduced carrier recombination, achieving a steady-state efficiency of 22.98% with enhanced stability. Furthermore, these optimized NBG Sn-Pb cells enable highly efficient two-terminal and four-terminal all-perovskite TSCs, boasting steady-state efficiencies of 27.54% (certified at 26.41%) and 28.01%, respectively. This study emphasizes the importance of optimizing NBG PSCs through buried interface reconstruction, propelling the advancement of all-perovskite TSCs
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|a Journal Article
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|a acetylcholine chloride
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|a all‐perovskite tandem solar cells
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|a buried interface
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|a grain boundary
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|a mixed tin‐lead
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|a Wang, Chen
|e verfasserin
|4 aut
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|a Fu, Shiqiang
|e verfasserin
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|a Zheng, Wenwen
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|a Shen, Weicheng
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|a Jia, Peng
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|a Huang, Lishuai
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|a Zhou, Shun
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|a Zhou, Jin
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|a Wang, Cheng
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|a Guan, Hongling
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|a Zhou, Yuan
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|a Zhang, Xuhao
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|a Pu, Dexin
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|a Fang, Hongyi
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|a Lin, Qingxian
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|a Ai, Wei
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|a Chen, Weiqing
|e verfasserin
|4 aut
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|a Zeng, Guojun
|e verfasserin
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|a Wang, Ti
|e verfasserin
|4 aut
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|a Qin, Pingli
|e verfasserin
|4 aut
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|a Fang, Guojia
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|a Ke, Weijun
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 36 vom: 29. Sept., Seite e2401698
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:36
|g day:29
|g month:09
|g pages:e2401698
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|u http://dx.doi.org/10.1002/adma.202401698
|3 Volltext
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