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240723s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202403538
|2 doi
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|a pubmed25n1250.xml
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|a eng
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| 100 |
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|a Wang, Le
|e verfasserin
|4 aut
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| 245 |
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|a Negative Photoconductivity Transistors for Visuomorphic Computing
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Revised 03.10.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Visuomorphic computing aims to simulate and potentially surpass the human retina by mimicking biological visual perception with an artificial retina. Despite significant progress, challenges persist in perceiving complex interactive environments. Negative photoconductivity transistors (NPTs) mimic synaptic behavior by achieving adjustable positive photoconductivity (PPC) and negative photoconductivity (NPC), simulating "excitation" and "inhibition" akin to sensory cell signals. In complex interactive environments, NPTs are desired for visuomorphic computing that can achieve a better sense of information, lower power consumption, and reduce hardware complexity. In this review, it is started by introducing the development process of NPTs, while placing a strong emphasis on the device structures, working mechanisms, and key performance parameters. The common material systems employed in NPTs based on their functions are then summarized. Moreover, it is proceeded to summarize the noteworthy applications of NPTs in optoelectronic devices, including advanced multibit nonvolatile memory, optoelectronic logic gates, optical encryption, and visual perception. Finally, the challenges and prospects that lie ahead in the ongoing development of NPTs are addressed, offering valuable insights into their applications in optoelectronics and a comprehensive understanding of their significance
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|a Journal Article
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|a Review
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|a multibit nonvolatile memory
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|a negative photoconductivity
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|a optoelectronic logic gate
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|a phototransistor
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|a visuomorphic computing
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| 700 |
1 |
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|a Wang, Haotian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Jing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yiru
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shao, He
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Wen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yi, Mingdong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ling, Haifeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xie, Linghai
|e verfasserin
|4 aut
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| 700 |
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|a Huang, Wei
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 38 vom: 31. Sept., Seite e2403538
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:38
|g day:31
|g month:09
|g pages:e2403538
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|u http://dx.doi.org/10.1002/adma.202403538
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