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240721s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202406246
|2 doi
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|a pubmed24n1538.xml
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|a (DE-627)NLM375196722
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|a (NLM)39032067
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|a DE-627
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|c DE-627
|e rakwb
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|a eng
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|a Zhao, Jinbo
|e verfasserin
|4 aut
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|a Suppressed Defects by Functional Thermally Cross-Linked Fullerene for High-Efficiency Tin-Lead Perovskite Solar Cells
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 18.09.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.
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|a Mixed tin-lead (Sn-Pb) perovskites have attracted the attention of the community due to their narrow bandgap, ideal for photovoltaic applications, especially tandem solar cells. However, the oxidation and rapid crystallization of Sn2+ and the interfacial traps hinder their development. Here, cross-linkable [6,6]-phenyl-C61-butyric styryl dendron ester (C-PCBSD) is introduced during the quenching step of perovskite thin film processing to suppress the generation of surface defects at the electron transport layer interface and improve the bulk crystallinity. The C-PCBSD has strong coordination ability with Sn2+ and Pb2+ perovskite precursors, which retards the crystallization process, suppresses the oxidation of Sn2+, and improves the perovskite bulk and surface crystallinity, yielding films with reduced nonradiative recombination and enhanced interface charge extraction. Besides, the C-PCBSD network deposited on the perovskite surface displays superior hydrophobicity and oxygen resistance. Consequently, the devices with C-PCBSD obtain PCEs of up to 23.4% and retained 97% of initial efficiency after 2000 h of storage in a N2 atmosphere
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|a Journal Article
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|a Sn‐Pb perovskite solar cell
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|a cross‐link fullerene
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|a defect passivation
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|a long time stability
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|a Su, Zhenhuang
|e verfasserin
|4 aut
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|a Pascual, Jorge
|e verfasserin
|4 aut
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|a Wu, Hongzhuo
|e verfasserin
|4 aut
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|a Wang, Haibin
|e verfasserin
|4 aut
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|a Aldamasy, Mahmoud H
|e verfasserin
|4 aut
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|a Zhou, Zhengji
|e verfasserin
|4 aut
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|a Wang, Chenyue
|e verfasserin
|4 aut
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|a Li, Guixiang
|e verfasserin
|4 aut
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|a Li, Zhe
|e verfasserin
|4 aut
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|a Gao, Xingyu
|e verfasserin
|4 aut
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|a Hsu, Chain-Shu
|e verfasserin
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|a Li, Meng
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 36 vom: 20. Sept., Seite e2406246
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:36
|g day:20
|g month:09
|g pages:e2406246
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|u http://dx.doi.org/10.1002/adma.202406246
|3 Volltext
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