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240716s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202407010
|2 doi
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|a pubmed24n1538.xml
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|a (DE-627)NLM374995052
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|a (NLM)39011780
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|a DE-627
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|a eng
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|a Li, Dongyan
|e verfasserin
|4 aut
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|a In-Sublattice Carrier Transition Enabled Polarimetric Photodetectors with Reconfigurable Polarity Transition
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 18.09.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Miniaturized polarimetric photodetectors based on anisotropic two-dimensional materials attract potential applications in ultra-compact polarimeters. However, these photodetectors are hindered by the small polarization ratio values and complicated artificial structures. Here, a novel polarization photodetector based on in-sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, with a giant and reconfigurable PR value, is demonstrated. The unique periodic sublattice structure of CdSb2Se3Br2 features an in-sublattice carrier transition preferred along Sb2Se3 chains. Leveraging on the in-sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, gate voltage has an anisotropic modulation effect on the band alignment of heterostructure along sublattice. Consequently, the heterostructure exhibits a polarization-tunable photo-induced threshold voltage shift, which provides reconfigurable PR values from positive (unipolar regime) to negative (bipolar regime), covering all possible numbers (1→+∞/-∞→-1). Using this anisotropic photovoltaic effect, gate-tunable polarimetric imaging is successfully implemented. This work provides a new platform for developing next-generation highly polarimetric optoelectronics
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|a Journal Article
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|a 2D materials
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|a polarimetric imaging
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|a polarization photodetectors
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|a reconfigurable polarization ratio
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|a van der Waals heterostructures
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1 |
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|a Li, Zexin
|e verfasserin
|4 aut
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1 |
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|a Sun, Yan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhou, Jian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Xiang
|e verfasserin
|4 aut
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1 |
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|a Wang, Haoyun
|e verfasserin
|4 aut
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| 700 |
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|a Chen, Yunxin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Song, Xingyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Pengbin
|e verfasserin
|4 aut
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| 700 |
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|a Luo, Zhengtang
|e verfasserin
|4 aut
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| 700 |
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|a Han, Su-Ting
|e verfasserin
|4 aut
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| 700 |
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|a Zhou, Xing
|e verfasserin
|4 aut
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| 700 |
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|a Zhai, Tianyou
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 36 vom: 16. Sept., Seite e2407010
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:36
|g day:16
|g month:09
|g pages:e2407010
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|u http://dx.doi.org/10.1002/adma.202407010
|3 Volltext
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