2D Reconfigurable Memory Device Enabled by Defect Engineering for Multifunctional Neuromorphic Computing

2D Reconfigurable Memory Device Enabled by Defect Engineering for Multifunctional Neuromorphic Computing

© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 35 vom: 01. Aug., Seite e2403785
1. Verfasser: Xia, Yunpeng (VerfasserIn)
Weitere Verfasser: Lin, Ning, Zha, Jiajia, Huang, Haoxin, Zhang, Yiwen, Liu, Handa, Tong, Jinyi, Xu, Songcen, Yang, Peng, Wang, Huide, Zheng, Long, Zhang, Zhuomin, Yang, Zhengbao, Chen, Ye, Chan, Hau Ping, Wang, Zhongrui, Tan, Chaoliang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article defect engineering ferroelectric polarization neuromorphic computing reconfigurable memory device van der Waals heterostructure
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245 1 0 |a 2D Reconfigurable Memory Device Enabled by Defect Engineering for Multifunctional Neuromorphic Computing 
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520 |a In this era of artificial intelligence and Internet of Things, emerging new computing paradigms such as in-sensor and in-memory computing call for both structurally simple and multifunctional memory devices. Although emerging two-dimensional (2D) memory devices provide promising solutions, the most reported devices either suffer from single functionalities or structural complexity. Here, this work reports a reconfigurable memory device (RMD) based on MoS2/CuInP2S6 heterostructure, which integrates the defect engineering-enabled interlayer defects and the ferroelectric polarization in CuInP2S6, to realize a simplified structure device for all-in-one sensing, memory and computing. The plasma treatment-induced defect engineering of the CuInP2S6 nanosheet effectively increases the interlayer defect density, which significantly enhances the charge-trapping ability in synergy with ferroelectric properties. The reported device not only can serve as a non-volatile electronic memory device, but also can be reconfigured into optoelectronic memory mode or synaptic mode after controlling the ferroelectric polarization states in CuInP2S6. When operated in optoelectronic memory mode, the all-in-one RMD could diagnose ophthalmic disease by segmenting vasculature within biological retinas. On the other hand, operating as an optoelectronic synapse, this work showcases in-sensor reservoir computing for gesture recognition with high energy efficiency 
650 4 |a Journal Article 
650 4 |a defect engineering 
650 4 |a ferroelectric polarization 
650 4 |a neuromorphic computing 
650 4 |a reconfigurable memory device 
650 4 |a van der Waals heterostructure 
700 1 |a Lin, Ning  |e verfasserin  |4 aut 
700 1 |a Zha, Jiajia  |e verfasserin  |4 aut 
700 1 |a Huang, Haoxin  |e verfasserin  |4 aut 
700 1 |a Zhang, Yiwen  |e verfasserin  |4 aut 
700 1 |a Liu, Handa  |e verfasserin  |4 aut 
700 1 |a Tong, Jinyi  |e verfasserin  |4 aut 
700 1 |a Xu, Songcen  |e verfasserin  |4 aut 
700 1 |a Yang, Peng  |e verfasserin  |4 aut 
700 1 |a Wang, Huide  |e verfasserin  |4 aut 
700 1 |a Zheng, Long  |e verfasserin  |4 aut 
700 1 |a Zhang, Zhuomin  |e verfasserin  |4 aut 
700 1 |a Yang, Zhengbao  |e verfasserin  |4 aut 
700 1 |a Chen, Ye  |e verfasserin  |4 aut 
700 1 |a Chan, Hau Ping  |e verfasserin  |4 aut 
700 1 |a Wang, Zhongrui  |e verfasserin  |4 aut 
700 1 |a Tan, Chaoliang  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 35 vom: 01. Aug., Seite e2403785  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:36  |g year:2024  |g number:35  |g day:01  |g month:08  |g pages:e2403785 
856 4 0 |u http://dx.doi.org/10.1002/adma.202403785  |3 Volltext 
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