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240715s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202404371
|2 doi
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|a pubmed24n1516.xml
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|a (DE-627)NLM374950067
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|a (NLM)39007276
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|a DE-627
|b ger
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Ju, Qiankun
|e verfasserin
|4 aut
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| 245 |
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|a Infrared Interlayer Excitons in Twist-Free MoTe2/MoS2 Heterobilayers
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 28.08.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Excitonic devices based on interlayer excitons in van der Waals heterobilayers are a promising platform for advancing photoelectric interconnection telecommunications. However, the absence of exciton emission in the crucial telecom C-band has constrained their practical applications. Here, this limitation is addressed by reporting exciton emission at 0.8 eV (1550 nm) in a chemically vapor-deposited, strictly aligned MoTe2/MoS2 heterobilayer, resulting from the direct bandgap transitions of interlayer excitons as identified by momentum-space imaging of their electrons and holes. The decay mechanisms dominated by direct radiative recombination ensure constant emission quantum yields, a basic demand for efficient excitonic devices. The atomically sharp interface enables the resolution of two narrowly-splitter transitions induced by spin-orbit coupling, further distinguished through the distinct Landé g-factors as the fingerprint of spin configurations. By electrical control, the double transitions coupling into opposite circularly-polarized photon modes, preserve or reverse the helicities of the incident light with a degree of polarization up to 90%. The Stark effect tuning extends the emission energy range by over 150 meV (270 nm), covering the telecom C-band. The findings provide a material platform for studying the excitonic complexes and significantly boost the application prospects of excitonic devices in silicon photonics and all-optical telecommunications
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|a Journal Article
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|a 2D materials
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|a MoTe2/MoS2 heterobilayer
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| 650 |
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4 |
|a excitonic devices
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| 650 |
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4 |
|a interlayer excitons
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| 650 |
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4 |
|a telecom C‐band
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| 700 |
1 |
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|a Cai, Qian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jian, Chuanyong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hong, Wenting
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Fapeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Bicheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Wei
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 35 vom: 01. Aug., Seite e2404371
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
8 |
|g volume:36
|g year:2024
|g number:35
|g day:01
|g month:08
|g pages:e2404371
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202404371
|3 Volltext
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