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240628s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202406128
|2 doi
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|a pubmed25n1246.xml
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|a (DE-627)NLM374279608
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|a (NLM)38940075
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Xu, Youkui
|e verfasserin
|4 aut
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|a Tailoring Multi-Phenyl Ring Cation for Stable Scalable Hybrid Bismuth Iodide Amorphous Film
|b Enabling Record Sensitivity and High-Performance X-Ray Array Imaging
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 15.08.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a The 329-type bismuth (Bi)-based metal halide (MH) polycrystalline films have potential to be applied in the new generation of X-ray imaging technology owing to high X-ray absorption coefficients and excellent detection properties. However, the mutually independent [Bi2X9]3- units and numerous grain boundaries in the material lead to low carrier transport and collection capabilities, severe ion migration, large dark currents, and poor response uniformity. Here, a new multi-phenyl ring methyltriphenylphosphonium (MTP) is designed to optimize the energy band structure. For the first time, the coupling between the A-site cation and [Bi2X9]3- is realized, making it the main contributor to the conduction band minimum (CBM), getting rid of dilemma that carrier transport is confined to [Bi2X9]3-. Further, the preparation of MTP3Bi2I9 amorphous large-area wafer is achieved by melt-quenching; the steric hindrance effect improves stability, increases ion migration energy, and promotes response uniformity (14%). Moreover, the amorphous structure takes advantage of A-site cation participation in the conductivity, achieving a record sensitivity (7601 µC Gy-1 cm-2) and low dark current (≈0.11 nA) in the field of amorphous X-ray detection, and features low-temperature large-area preparation. Ultimately, designing amorphous array imaging devices that exhibit excellent response uniformity and potential imaging capabilities is succeeded here
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|a Journal Article
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|a MTP3Bi2I9
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|a X‐ray imaging
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|a amorphous film
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|a integration
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|a ion migration
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1 |
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|a Li, ZhenHua
|e verfasserin
|4 aut
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|a Shi, Chang
|e verfasserin
|4 aut
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|a Li, Yumai
|e verfasserin
|4 aut
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|a Lei, Yutian
|e verfasserin
|4 aut
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|a Peng, Guoqiang
|e verfasserin
|4 aut
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| 700 |
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|a Yu, Tengfei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ren, Haiyu
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Haoxu
|e verfasserin
|4 aut
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|a Fan, Hengzhong
|e verfasserin
|4 aut
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|a Zhang, Yongsheng
|e verfasserin
|4 aut
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|a Ci, Zhipeng
|e verfasserin
|4 aut
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|a Wang, Qian
|e verfasserin
|4 aut
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| 700 |
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|a Jin, Zhiwen
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 33 vom: 21. Aug., Seite e2406128
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:33
|g day:21
|g month:08
|g pages:e2406128
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202406128
|3 Volltext
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|d 36
|j 2024
|e 33
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|c 08
|h e2406128
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