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240627s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202404010
|2 doi
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|a pubmed25n1246.xml
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|a (NLM)38935245
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|a DE-627
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|e rakwb
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|a eng
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|a Jin, Yongbin
|e verfasserin
|4 aut
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|a Efficient and Stable Monolithic Perovskite/Silicon Tandem Solar Cells Enabled by Contact-Resistance-Tunable Indium Tin Oxide Interlayer
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 28.08.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a The imperfect charge behavior at the interfaces of perovskite/electron-transport layer (ETL)/transparent conducting oxide (TCO) limits the further performance improvement of perovskite/silicon tandem solar cells. Herein, an indium tin oxide interlayer is deposited between ETL and TCO to address this issue. Specifically, the interlayer is prepared using an all-physical and H2O-free method, electron-beam evaporation, which can avoid any potential damage to the underlying perovskite and ETL layers. Moreover, the interlayer's composition can be readily tuned by changing the evaporator component, enabling authors to regulate the contact resistance and energy-level alignment of the ETL/TCO interface. Consequently, the resultant perovskite/silicon tandem solar cells exhibit an impressive power conversion efficiency (PCE) of 30.8% (certified 30.3%). Moreover, the device retains 98% of its initial PCE after continuous operation under ambient conditions for 1078 h, representing one of the most stable and efficient perovskite/silicon tandem solar cells
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|a Journal Article
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|a contact resistance
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|a electron‐beam evaporation
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|a indium tin oxide interlayer
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|a perovskite/silicon tandem solar cells
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|a Feng, Huiping
|e verfasserin
|4 aut
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|a Fang, Zheng
|e verfasserin
|4 aut
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|a Zhang, Hong
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|4 aut
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|a Yang, Liu
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|a Chen, Xuelin
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|a Li, Yingji
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|a Deng, Bingru
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|4 aut
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|a Zhong, Yawen
|e verfasserin
|4 aut
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|a Zeng, Qinghua
|e verfasserin
|4 aut
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|a Huang, Jiarong
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|4 aut
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|a Weng, Yalian
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|4 aut
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|a Yang, Jinxin
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|4 aut
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|a Tian, Chengbo
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|4 aut
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|a Xie, Liqiang
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|a Zhang, Jinyan
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|a Wei, Zhanhua
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 35 vom: 27. Aug., Seite e2404010
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:36
|g year:2024
|g number:35
|g day:27
|g month:08
|g pages:e2404010
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|u http://dx.doi.org/10.1002/adma.202404010
|3 Volltext
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