DNA-Templated Nanofabrication of CdS-Au Nanoscale Schottky Contacts and Electrical Characterization

DNA-templated nanofabrication presents an innovative approach to creating self-assembled nanoscale metal-semiconductor-based Schottky contacts, which can advance nanoelectronics. Herein, we report the successful fabrication of metal-semiconductor Schottky contacts using a DNA origami scaffold. The s...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 40(2024), 27 vom: 09. Juli, Seite 14076-14085
1. Verfasser: Pang, Chao (VerfasserIn)
Weitere Verfasser: Karlinsey, Benjamin T, Ward, Megan, Harrison, Roger G, Davis, Robert C, Woolley, Adam T
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article Gold 7440-57-5 Cadmium Compounds Sulfides DNA 9007-49-2 cadmium sulfide 057EZR4Z7Q
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520 |a DNA-templated nanofabrication presents an innovative approach to creating self-assembled nanoscale metal-semiconductor-based Schottky contacts, which can advance nanoelectronics. Herein, we report the successful fabrication of metal-semiconductor Schottky contacts using a DNA origami scaffold. The scaffold, consisting of DNA strands organized into a specific linear architecture, facilitates the competitive arrangement of Au and CdS nanorods, forming heterojunctions, and addresses previous limitations in low electrical conductance making DNA-templated electronics with semiconductor nanomaterials. Electroless gold plating extends the Au nanorods and makes the necessary electrical contacts. Tungsten electrical connection lines are further created by electron beam-induced deposition. Electrical characterization reveals nonlinear Schottky barrier behavior, with electrical conductance ranging from 0.5 × 10-4 to 1.7 × 10-4 S. The conductance of these DNA-templated junctions is several million times higher than with our prior Schottky contacts. Our research establishes an innovative self-assembly approach with applicable metal and semiconductor materials for making highly conductive nanoscale Schottky contacts, paving the way for the future development of DNA-based nanoscale electronics 
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700 1 |a Karlinsey, Benjamin T  |e verfasserin  |4 aut 
700 1 |a Ward, Megan  |e verfasserin  |4 aut 
700 1 |a Harrison, Roger G  |e verfasserin  |4 aut 
700 1 |a Davis, Robert C  |e verfasserin  |4 aut 
700 1 |a Woolley, Adam T  |e verfasserin  |4 aut 
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