Enhanced Interface Charge Carrier Transport of SnO2/CeO2 via Oxygen Vacancy Synergized Heterojunction for Triethylamine Sensing Property

Efficient charge carrier transport characteristics are critical to achieving the excellent performance of metal-oxide semiconductor gas sensors. Herein, SnO2/CeO2 heterojunction layered nanosheets with abundant oxygen vacancies were successfully synthesized through a simple solvothermal assisted hig...

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Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 40(2024), 26 vom: 02. Juli, Seite 13446-13457
1. Verfasser: Liu, Jinmei (VerfasserIn)
Weitere Verfasser: Feng, Shaohan, Sun, Lixia, Wei, Xu, Chen, Lingling, Liao, Dankui, Sun, Jianhua
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
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520 |a Efficient charge carrier transport characteristics are critical to achieving the excellent performance of metal-oxide semiconductor gas sensors. Herein, SnO2/CeO2 heterojunction layered nanosheets with abundant oxygen vacancies were successfully synthesized through a simple solvothermal assisted high-temperature calcination method. The synergistic effect of oxygen vacancies and heterojunctions promoting the charge carrier transport properties at the SnO2/CeO2 interface for the enhanced sensing properties of triethylamine (TEA) was highlighted. As a result, the optimized SnO2/CeO2 exhibits improved gas sensing performance at 173 °C to 50 ppm of TEA. These include high response (205), excellent selectivity, low detection limit, and good long-term stability. This enhanced gas sensing property of SnO2/CeO2 is mainly attributed to the fact that the heterojunction and oxygen vacancies act as dual active sites synergistically inducing electron transfer, thereby effectively modulating the transport properties of the interfacial charge carriers, and thus facilitate the surface reactions efficiently. In this work, the dual-engineering strategy of synergistic interaction of heterojunction and oxygen vacancies can provide new perspectives for the design of advanced gas sensing materials 
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700 1 |a Feng, Shaohan  |e verfasserin  |4 aut 
700 1 |a Sun, Lixia  |e verfasserin  |4 aut 
700 1 |a Wei, Xu  |e verfasserin  |4 aut 
700 1 |a Chen, Lingling  |e verfasserin  |4 aut 
700 1 |a Liao, Dankui  |e verfasserin  |4 aut 
700 1 |a Sun, Jianhua  |e verfasserin  |4 aut 
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