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240613s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202406872
|2 doi
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|a pubmed25n1244.xml
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|a (DE-627)NLM37353602X
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|a (NLM)38865488
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Zhu, Helong
|e verfasserin
|4 aut
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|a Improved Hole-Selective Contact Enables Highly Efficient and Stable FAPbBr3 Perovskite Solar Cells and Semitransparent Modules
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 15.08.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Self-assembled monolayers (SAMs) as the hole-selective contact have achieved remarkable success in iodine-based perovskite solar cells (PSCs), while their impact on bromine-based PSCs is limited due to the poor perovskite crystallization behavior and mismatched energy level alignment. Here, a highly efficient SAM of (2-(3,6-diiodo-9H-carbazol-9-yl)ethyl)phosphonic acid (I-2PACz) is employed to address these challenges in FAPbBr3-based PSCs. The incorporation of I atoms into I-2PACz not only releases tensile stress within FAPbBr3 perovskite, promoting oriented crystallization and minimizing defects through halogen-halogen bond, but also optimizes the energy levels alignment at hole-selective interface for enhanced hole extraction. Ultimately, a power conversion efficiency (PCE) of 11.14% is achieved, which stands among the highest reported value for FAPbBr3 PSCs. Furthermore, the semitransparent devices/modules exhibit impressive PCEs of 8.19% and 6.23% with average visible transmittance of 41.98% and 38.99%. Remarkably, after operating at maximum power point for 1000 h, the encapsulated device maintains 93% of its initial PCE. These results demonstrate an effective strategy for achieving high-performance bromine-based PSCs toward further applications
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|a Journal Article
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|a FAPbBr3 solar cells
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|a halogen‐halogen bond
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|a self‐assembled monolayer
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| 650 |
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|a semitransparent modules
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| 650 |
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4 |
|a stress release
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1 |
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|a Xu, Zigeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Zhiyang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lian, Shuang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Yanjie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Dezhong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhan, Hongmei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Lixiang
|e verfasserin
|4 aut
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| 700 |
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|a Han, Liyuan
|e verfasserin
|4 aut
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| 700 |
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|a Qin, Chuanjiang
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 33 vom: 16. Aug., Seite e2406872
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:36
|g year:2024
|g number:33
|g day:16
|g month:08
|g pages:e2406872
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|u http://dx.doi.org/10.1002/adma.202406872
|3 Volltext
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