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240531s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202404160
|2 doi
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|a pubmed24n1495.xml
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|a (DE-627)NLM373035284
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|a (NLM)38815276
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Wang, Yiru
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Dual-Adaptive Heterojunction Synaptic Transistors for Efficient Machine Vision in Harsh Lighting Conditions
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 08.08.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Photoadaptive synaptic devices enable in-sensor processing of complex illumination scenes, while second-order adaptive synaptic plasticity improves learning efficiency by modifying the learning rate in a given environment. The integration of above adaptations in one phototransistor device will provide opportunities for developing high-efficient machine vision system. Here, a dually adaptable organic heterojunction transistor as a working unit in the system, which facilitates precise contrast enhancement and improves convergence rate under harsh lighting conditions, is reported. The photoadaptive threshold sliding originates from the bidirectional photoconductivity caused by the light intensity-dependent photogating effect. Metaplasticity is successfully implemented owing to the combination of ambipolar behavior and charge trapping effect. By utilizing the transistor array in a machine vision system, the details and edges can be highlighted in the 0.4% low-contrast images, and a high recognition accuracy of 93.8% with a significantly promoted convergence rate by about 5 times are also achieved. These results open a strategy to fully implement metaplasticity in optoelectronic devices and suggest their vision processing applications in complex lighting scenes
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|a Journal Article
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|a adaptation
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|a machine vision
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|a metaplasticity
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| 650 |
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|a organic heterojunction
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| 650 |
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|a visuomorphic computing
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| 700 |
1 |
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|a Nie, Shimiao
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Shanshuo
|e verfasserin
|4 aut
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| 700 |
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|a Hu, Yunfei
|e verfasserin
|4 aut
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| 700 |
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|a Fu, Jingwei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ming, Jianyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Jing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yueqing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a He, Xiang
|e verfasserin
|4 aut
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| 700 |
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|a Wang, Le
|e verfasserin
|4 aut
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| 700 |
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|a Li, Wen
|e verfasserin
|4 aut
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| 700 |
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|a Yi, Mingdong
|e verfasserin
|4 aut
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| 700 |
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|a Ling, Haifeng
|e verfasserin
|4 aut
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| 700 |
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|a Xie, Linghai
|e verfasserin
|4 aut
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| 700 |
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|a Huang, Wei
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 32 vom: 01. Aug., Seite e2404160
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:32
|g day:01
|g month:08
|g pages:e2404160
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202404160
|3 Volltext
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