Graphene-Enhanced UV-C LEDs

© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 32 vom: 15. Aug., Seite e2313037
Auteur principal: Meier, Johanna (Auteur)
Autres auteurs: Zhang, Hehe, Kaya, Umut, Mertin, Wolfgang, Bacher, Gerd
Format: Article en ligne
Langue:English
Publié: 2024
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article 2D materials AlGaN graphene light‐emitting diodes uv‐c
LEADER 01000caa a22002652c 4500
001 NLM372986234
003 DE-627
005 20250306062117.0
007 cr uuu---uuuuu
008 240530s2024 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202313037  |2 doi 
028 5 2 |a pubmed25n1242.xml 
035 |a (DE-627)NLM372986234 
035 |a (NLM)38810365 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Meier, Johanna  |e verfasserin  |4 aut 
245 1 0 |a Graphene-Enhanced UV-C LEDs 
264 1 |c 2024 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 08.08.2024 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH. 
520 |a Light-emitting diodes in the UV-C spectral range (UV-C LEDs) can potentially replace bulky and toxic mercury lamps in a wide range of applications including sterilization and water purification. Several obstacles still limit the efficiencies of UV-C LEDs. Devices in flip-chip geometry suffer from a huge difference in the work functions between the p-AlGaN and high-reflective Al mirrors, whereas the absence of UV-C transparent current spreading layers limits the development of UV-C LEDs in standard geometry. Here it is demonstrated that transfer-free graphene implemented directly onto the p-AlGaN top layer by a plasma enhanced chemical vapor deposition approach enables highly efficient 275 nm UV-C LEDs in both, flip-chip and standard geometry. In flip-chip geometry, the graphene acts as a contact interlayer between the Al-mirror and the p-AlGaN enabling an external quantum efficiency (EQE) of 9.5% and a wall-plug efficiency (WPE) of 5.5% at 8 V. Graphene combined with a ≈1 nm NiOx support layer allows a turn-on voltage <5 V. In standard geometry graphene acts as a current spreading layer on a length scale up to 1 mm. These top-emitting devices exhibit a EQE of 2.1% at 8.7 V and a WPE of 1.1% 
650 4 |a Journal Article 
650 4 |a 2D materials 
650 4 |a AlGaN 
650 4 |a graphene 
650 4 |a light‐emitting diodes 
650 4 |a uv‐c 
700 1 |a Zhang, Hehe  |e verfasserin  |4 aut 
700 1 |a Kaya, Umut  |e verfasserin  |4 aut 
700 1 |a Mertin, Wolfgang  |e verfasserin  |4 aut 
700 1 |a Bacher, Gerd  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 32 vom: 15. Aug., Seite e2313037  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:36  |g year:2024  |g number:32  |g day:15  |g month:08  |g pages:e2313037 
856 4 0 |u http://dx.doi.org/10.1002/adma.202313037  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 36  |j 2024  |e 32  |b 15  |c 08  |h e2313037