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240521s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202405684
|2 doi
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|a pubmed24n1488.xml
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|a (DE-627)NLM372582680
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|a (NLM)38769911
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Lin, Yuexin
|e verfasserin
|4 aut
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| 245 |
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|a Transparent Recombination Layers Design and Rational Characterizations for Efficient Two-Terminal Perovskite-Based Tandem Solar Cells
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 01.08.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Two-terminal (2T) perovskite-based tandem solar cells (TSCs) arouse burgeoning interest in breaking the Shockley-Queisser (S-Q) limit of single-junction solar cells by combining two subcells with different bandgaps. However, the highest certified efficiency of 2T perovskite-based TSCs (33.9%) lags behind the theoretical limit (42-43%). A vital challenge limiting the development of 2T perovskite-based TSCs is the transparent recombination layers/interconnecting layers (RLs) design between two subcells. To improve the performance of 2T perovskite-based TSCs, RLs simultaneously fulfill the optical loss, contact resistance, carrier mobility, stress management, and conformal coverage requirements. In this review, the definition, functions, and requirements of RLs in 2T perovskite-based TSCs are presented. The insightful characterization methods applicable to RLs, which are inspiring for further research on the RLs both in 2T perovskite-based two-junction and multi-junction TSCs, are also highlighted. Finally, the key factors that currently limit the performance enhancement of RLs and the future directions that should be continuously focused on are summarized
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|a Journal Article
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|a Review
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|a device design
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| 650 |
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|a monolithic tandem solar cells
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| 650 |
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4 |
|a perovskite solar cells
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| 650 |
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|a recombination layers
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| 650 |
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|a solar energy
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| 700 |
1 |
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|a Yang, Wenhan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gu, Hao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Du, Fenqi
|e verfasserin
|4 aut
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| 700 |
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|a Liao, Jinfeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Dejian
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xia, Junmin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Haibin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Shengchun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fang, Guojia
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liang, Chao
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 31 vom: 20. Aug., Seite e2405684
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:31
|g day:20
|g month:08
|g pages:e2405684
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202405684
|3 Volltext
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