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240521s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202401537
|2 doi
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|a pubmed25n1241.xml
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|a (NLM)38768481
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|a eng
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|a Wu, Jie
|e verfasserin
|4 aut
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|a Bisphosphonate-Anchored Self-Assembled Molecules with Larger Dipole Moments for Efficient Inverted Perovskite Solar Cells with Excellent Stability
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 12.07.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a In the fabrication of inverted perovskite solar cells (PSCs), the wettability, adsorbability, and compactness of self-assembled monolayers (SAMs) on conductive substrates have critical impacts on the quality of the perovskite films and the defects at the buried perovskite-substrate interface, which control the efficiency and stability of the devices. Herein, three bisphosphonate-anchored indolocarbazole (IDCz)-derived SAMs, IDCz-1, IDCz-2, and IDCz-3, are designed and synthesized by modulating the position of the two nitrogen atoms of the IDCz unit to improve the molecular dipole moments and strengthen the π-π interactions. Regulating the work functions (WF) of FTO electrodes through molecular dipole moments and energy levels, the perovskite band bends upwards with a small offset for ITO/IDCz-3/perovskite, thereby promoting hole extraction and blocking electrons. As a result, the inverted PSC employing IDCz-3 as hole-collecting layer exhibits a champion PCE of 25.15%, which is a record efficiency for the multipodal SAMs-based PSCs. Moreover, the unencapsulated device with IDCz-3 can be stored for at least 1800 h with little degradation in performance
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|a Journal Article
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|a bisphosphonic acid
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|a dipole moments
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|a hole‐transporting layer
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|a inverted perovskite solar cells
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|a self‐assembled monolayer
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|a Yan, Pengyu
|e verfasserin
|4 aut
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|a Yang, Daobin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guan, Haowei
|e verfasserin
|4 aut
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|a Yang, Shuncheng
|e verfasserin
|4 aut
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|a Cao, Xinyue
|e verfasserin
|4 aut
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|a Liao, Xiaochun
|e verfasserin
|4 aut
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| 700 |
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|a Ding, Pengfei
|e verfasserin
|4 aut
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|a Sun, He
|e verfasserin
|4 aut
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|a Ge, Ziyi
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 28 vom: 01. Juli, Seite e2401537
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:36
|g year:2024
|g number:28
|g day:01
|g month:07
|g pages:e2401537
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|u http://dx.doi.org/10.1002/adma.202401537
|3 Volltext
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