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|a 10.1002/adma.202403097
|2 doi
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|a pubmed24n1488.xml
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|a (NLM)38753369
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|a eng
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|a Zhao, Yuliang
|e verfasserin
|4 aut
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|a Unveiling the Role of Cationic Pyridine Sites in Covalent Triazine Framework for Boosting Zinc-Iodine Batteries Performance
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|c 2024
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 01.08.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Rechargeable Zinc-iodine batteries (ZIBs) are gaining attention as energy storage devices due to their high energy density, low-cost, and inherent safety. However, the poor cycling performance of these batteries always arises from the severe leakage and shuttle effect of polyiodides (I3 - and I5 -). Herein, a novel cationic pyridine-rich covalent triazine framework (CCTF-TPMB) is developed to capture and confine iodine (I2) species via strong electrostatic interaction, making it an attractive host for I2 in ZIBs. The as-fabricated ZIBs with I2 loaded CCTF-TPMB (I2CCTF-TPMB) cathode achieve a large specific capacity of 243 mAh g-1 at 0.2 A g-1 and an exceptionally stable cyclic performance, retaining 93.9% of its capacity over 30 000 cycles at 5 A g-1. The excellent electrochemical performance of the ZIBs can be attributed to the pyridine-rich cationic sites of CCTF-TPMB, which effectively suppress the leakage and shuttle of polyiodides, while also accelerating the conversion reaction of I2 species. Combined in situ Raman and UV-vis analysis, along with theoretical calculations, clearly reveal the critical role played by pyridine-rich cationic sites in boosting the ZIBs performances. This work opens up a promising pathway for designing advanced I2 cathode materials toward next-generation ZIBs and beyond
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|a Journal Article
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|a covalent triazine frameworks
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|a electrostatic interactions
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|a polyiodide confinement
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|a pyridine‐rich cationic sites
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|a zinc–iodine batteries
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|a Wang, Yiyang
|e verfasserin
|4 aut
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|a Xue, Wenjuan
|e verfasserin
|4 aut
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|a Cheng, Ruyi
|e verfasserin
|4 aut
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|a Zheng, Xuan
|e verfasserin
|4 aut
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|a Zhu, Gengcong
|e verfasserin
|4 aut
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|a Hu, Dayin
|e verfasserin
|4 aut
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|a Huang, Hongliang
|e verfasserin
|4 aut
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|a Hu, Chuangang
|e verfasserin
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|a Liu, Dong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 31 vom: 16. Aug., Seite e2403097
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:31
|g day:16
|g month:08
|g pages:e2403097
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|u http://dx.doi.org/10.1002/adma.202403097
|3 Volltext
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