Fully Reprogrammable 2D Array of Multistate Molecular Switching Units

© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 36 vom: 15. Sept., Seite e2401662
1. Verfasser: Bauer, Anja (VerfasserIn)
Weitere Verfasser: Birk, Tobias, Paschke, Fabian, Fuhrberg, Andreas, Diegel, Josefine, Becherer, Ann-Kathrin, Vogelsang, Lars, Maier, Markus, Schosser, Werner M, Pauly, Fabian, Zilberberg, Oded, Winter, Rainer F, Fonin, Mikhail
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article DFT calculations molecular memory molecular switch scanning tunneling microscopy
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520 |a Integration of molecular switching units into complex electronic circuits is considered to be the next step toward the realization of novel logic and memory devices. This paper reports on an ordered 2D network of neighboring ternary switching units represented by triazatruxene (TAT) molecules organized in a honeycomb lattice on a Ag(111) surface. Using low-temperature scanning tunneling microscopy, the bonding configurations of individual TAT molecules can be controlled, realizing up to 12 distinct states per molecule. The switching between those states shows a strong bias dependence ranging from tens of millivolts to volts. The low-bias switching behavior is explored in active units consisting of two and more interacting TAT molecules that are purposefully defined (programmed) by high-bias switching within the honeycomb lattice. Within such a unit the low-bias switching can be triggered and accessed by single-point measurements on a single TAT molecule, demonstrating up to 9 and 19 distinguishable states in a dyad and a tetrad of coupled molecules, respectively. High experimental control over the desired state, owing to bias-dependent hierarchical switching and pronounced switching directionality, as well as full reversibility, make this system particularly appealing, paving the way to design complex molecule-based memory systems 
650 4 |a Journal Article 
650 4 |a DFT calculations 
650 4 |a molecular memory 
650 4 |a molecular switch 
650 4 |a scanning tunneling microscopy 
700 1 |a Birk, Tobias  |e verfasserin  |4 aut 
700 1 |a Paschke, Fabian  |e verfasserin  |4 aut 
700 1 |a Fuhrberg, Andreas  |e verfasserin  |4 aut 
700 1 |a Diegel, Josefine  |e verfasserin  |4 aut 
700 1 |a Becherer, Ann-Kathrin  |e verfasserin  |4 aut 
700 1 |a Vogelsang, Lars  |e verfasserin  |4 aut 
700 1 |a Maier, Markus  |e verfasserin  |4 aut 
700 1 |a Schosser, Werner M  |e verfasserin  |4 aut 
700 1 |a Pauly, Fabian  |e verfasserin  |4 aut 
700 1 |a Zilberberg, Oded  |e verfasserin  |4 aut 
700 1 |a Winter, Rainer F  |e verfasserin  |4 aut 
700 1 |a Fonin, Mikhail  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 36 vom: 15. Sept., Seite e2401662  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:36  |g year:2024  |g number:36  |g day:15  |g month:09  |g pages:e2401662 
856 4 0 |u http://dx.doi.org/10.1002/adma.202401662  |3 Volltext 
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