Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing

© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - (2024) vom: 13. Mai, Seite e2400332
1. Verfasser: Chen, Chunsheng (VerfasserIn)
Weitere Verfasser: Zhou, Yaoqiang, Tong, Lei, Pang, Yue, Xu, Jianbin
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Review 2D materials ferroelectric device in‐memory computing in‐sensor computing neural network
Beschreibung
Zusammenfassung:© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.
The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in-memory and in-sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data-intensive sensing and computing applications. The integration of 2D materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling-bond-free surface, ultra-fast polarization flipping, and ultra-low power consumption of the 2D ferroelectrics. Here, the recent progress of 2D ferroelectric devices for in-sensing and in-memory neuromorphic computing is reviewed. Experimental and theoretical progresses on 2D ferroelectric devices, including passive ferroelectrics-integrated 2D devices and active ferroelectrics-integrated 2D devices, are reviewed followed by the integration of perception, memory, and computing application. Notably, 2D ferroelectric devices have been used to simulate synaptic weights, neuronal model functions, and neural networks for image processing. As an emerging device configuration, 2D ferroelectric devices have the potential to expand into the sensor-memory and computing integration application field, leading to new possibilities for modern electronics
Beschreibung:Date Revised 20.05.2024
published: Print-Electronic
Citation Status Publisher
ISSN:1521-4095
DOI:10.1002/adma.202400332