Polyacrylonitrile as an Efficient Transfer Medium for Wafer-Scale Transfer of Graphene

Polyacrylonitrile as an Efficient Transfer Medium for Wafer-Scale Transfer of Graphene

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 29 vom: 03. Juli, Seite e2402000
1. Verfasser: Shang, Mingpeng (VerfasserIn)
Weitere Verfasser: Bu, Saiyu, Hu, Zhaoning, Zhao, Yixuan, Liao, Junhao, Zheng, Chunyang, Liu, Wenlin, Lu, Qi, Li, Fangfang, Wu, Haotian, Shi, Zhuofeng, Zhu, Yaqi, Xu, Zhiying, Guo, Bingbing, Yu, Beiming, Li, Chunhu, Zhang, Xiaodong, Xie, Qin, Yin, Jianbo, Jia, Kaicheng, Peng, Hailin, Lin, Li, Liu, Zhongfan
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article carrier mobility chemical vapor deposition encapsulation graphene single‐crystalline wafer graphene transfer
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520 |a The disparity between growth substrates and application-specific substrates can be mediated by reliable graphene transfer, the lack of which currently strongly hinders the graphene applications. Conventionally, the removal of soft polymers, that support the graphene during the transfer, would contaminate graphene surface, produce cracks, and leave unprotected graphene surface sensitive to airborne contaminations. In this work, it is found that polyacrylonitrile (PAN) can function as polymer medium for transferring wafer-size graphene, and encapsulating layer to deliver high-performance graphene devices. Therefore, PAN, that is compatible with device fabrication, does not need to be removed for subsequent applications. The crack-free transfer of 4 in. graphene onto SiO2/Si wafers, and the wafer-scale fabrication of graphene-based field-effect transistor arrays with no observed clear doping, uniformly high carrier mobility (≈11 000 cm2 V-1 s-1), and long-term stability at room temperature, are achieved. This work presents new concept for designing the transfer process of 2D materials, in which multifunctional polymer can be retained, and offers a reliable method for fabricating wafer-scale devices of 2D materials with outstanding performance 
650 4 |a Journal Article 
650 4 |a carrier mobility 
650 4 |a chemical vapor deposition 
650 4 |a encapsulation 
650 4 |a graphene single‐crystalline wafer 
650 4 |a graphene transfer 
700 1 |a Bu, Saiyu  |e verfasserin  |4 aut 
700 1 |a Hu, Zhaoning  |e verfasserin  |4 aut 
700 1 |a Zhao, Yixuan  |e verfasserin  |4 aut 
700 1 |a Liao, Junhao  |e verfasserin  |4 aut 
700 1 |a Zheng, Chunyang  |e verfasserin  |4 aut 
700 1 |a Liu, Wenlin  |e verfasserin  |4 aut 
700 1 |a Lu, Qi  |e verfasserin  |4 aut 
700 1 |a Li, Fangfang  |e verfasserin  |4 aut 
700 1 |a Wu, Haotian  |e verfasserin  |4 aut 
700 1 |a Shi, Zhuofeng  |e verfasserin  |4 aut 
700 1 |a Zhu, Yaqi  |e verfasserin  |4 aut 
700 1 |a Xu, Zhiying  |e verfasserin  |4 aut 
700 1 |a Guo, Bingbing  |e verfasserin  |4 aut 
700 1 |a Yu, Beiming  |e verfasserin  |4 aut 
700 1 |a Li, Chunhu  |e verfasserin  |4 aut 
700 1 |a Zhang, Xiaodong  |e verfasserin  |4 aut 
700 1 |a Xie, Qin  |e verfasserin  |4 aut 
700 1 |a Yin, Jianbo  |e verfasserin  |4 aut 
700 1 |a Jia, Kaicheng  |e verfasserin  |4 aut 
700 1 |a Peng, Hailin  |e verfasserin  |4 aut 
700 1 |a Lin, Li  |e verfasserin  |4 aut 
700 1 |a Liu, Zhongfan  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 29 vom: 03. Juli, Seite e2402000  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:36  |g year:2024  |g number:29  |g day:03  |g month:07  |g pages:e2402000 
856 4 0 |u http://dx.doi.org/10.1002/adma.202402000  |3 Volltext 
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