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240512s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202401693
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|a pubmed24n1474.xml
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|a (DE-627)NLM372218679
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|a (NLM)38733317
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|a DE-627
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|a eng
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|a Xiong, Hanting
|e verfasserin
|4 aut
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|a Topology Reconfiguration of Anion-Pillared Metal-Organic Framework from Flexibility to Rigidity for Enhanced Acetylene Separation
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 18.07.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Flexible metal-organic framework (MOF) adsorbents commonly encounter limitations in removing trace impurities below gate-opening threshold pressures. Topology reconfiguration can fundamentally eliminate intrinsic structural flexibility, yet remains a formidable challenge and is rarely achieved in practical applications. Herein, a solvent-mediated approach is presented to regulate the flexible CuSnF6-dpds-sql (dpds = 4,4''-dipyridyldisulfide) with sql topology into rigid CuSnF6-dpds-cds with cds topology. Notably, the cds topology is unprecedented and first obtained in anion-pillared MOF materials. As a result, rigid CuSnF6-dpds-cds exhibits enhanced C2H2 adsorption capacity of 48.61 cm3 g-1 at 0.01 bar compared to flexible CuSnF6-dpds-sql (21.06 cm3 g-1). The topology transformation also facilitates the adsorption kinetics for C2H2, exhibiting a 6.5-fold enhanced diffusion time constant (D/r2) of 1.71 × 10-3 s-1 on CuSnF6-dpds-cds than that of CuSnF6-dpds-sql (2.64 × 10-4 s-1). Multiple computational simulations reveal the structural transformations and guest-host interactions in both adsorbents. Furthermore, dynamic breakthrough experiments demonstrate that high-purity C2H4 (>99.996%) effluent with a productivity of 93.9 mmol g-1 can be directly collected from C2H2/C2H4 (1/99, v/v) gas-mixture in a single CuSnF6-dpds-cds column
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|a Journal Article
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|a adsorption
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|a gas purification
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|a metal–organic frameworks
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|a separation
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|a topology reconfiguration
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|a Peng, Yong
|e verfasserin
|4 aut
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|a Liu, Xing
|e verfasserin
|4 aut
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|a Wang, Pengxiang
|e verfasserin
|4 aut
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|a Zhang, Peixin
|e verfasserin
|4 aut
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|a Yang, Longsheng
|e verfasserin
|4 aut
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|a Liu, Junhui
|e verfasserin
|4 aut
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|a Shuai, Hua
|e verfasserin
|4 aut
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|a Wang, Lingmin
|e verfasserin
|4 aut
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|a Deng, Zhenning
|e verfasserin
|4 aut
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|a Chen, Shixia
|e verfasserin
|4 aut
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|a Chen, Jingwen
|e verfasserin
|4 aut
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|a Zhou, Zhenyu
|e verfasserin
|4 aut
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|a Deng, Shuguang
|e verfasserin
|4 aut
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|a Wang, Jun
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 29 vom: 01. Juli, Seite e2401693
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:29
|g day:01
|g month:07
|g pages:e2401693
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|u http://dx.doi.org/10.1002/adma.202401693
|3 Volltext
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