Interfacially Enhanced Superconductivity in Fe(Te,Se)/Bi4Te3 Heterostructures

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 31 vom: 07. Aug., Seite e2401809
1. Verfasser: Chen, An-Hsi (VerfasserIn)
Weitere Verfasser: Lu, Qiangsheng, Hershkovitz, Eitan, Crespillo, Miguel L, Mazza, Alessandro R, Smith, Tyler, Ward, T Zac, Eres, Gyula, Gandhi, Shornam, Mahfuz, Meer Muhtasim, Starchenko, Vitalii, Hattar, Khalid, Lee, Joon Sue, Kim, Honggyu, Moore, Robert G, Brahlek, Matthew
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article molecular beam epitaxy quantum materials topological materials topological superconductor
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520 |a Realizing topological superconductivity by integrating high-transition-temperature (TC) superconductors with topological insulators can open new paths for quantum computing applications. Here, a new approach is reported for increasing the superconducting transition temperature ( T C onset ) $( {T_{\mathrm{C}}^{{\mathrm{onset}}}} )$ by interfacing the unconventional superconductor Fe(Te,Se) with the topological insulator Bi-Te system in the low-Se doping regime, near where superconductivity vanishes in the bulk. The critical finding is that the T C onset $T_{\mathrm{C}}^{{\mathrm{onset}}}$ of Fe(Te,Se) increases from nominally non-superconducting to as high as 12.5 K when Bi2Te3 is replaced with the topological phase Bi4Te3. Interfacing Fe(Te,Se) with Bi4Te3 is also found to be critical for stabilizing superconductivity in monolayer films where T C onset $T_{\mathrm{C}}^{{\mathrm{onset}}}$ can be as high as 6 K. Measurements of the electronic and crystalline structure of the Bi4Te3 layer reveal that a large electron transfer, epitaxial strain, and novel chemical reduction processes are critical factors for the enhancement of superconductivity. This novel route for enhancing TC in an important epitaxial system provides new insight on the nature of interfacial superconductivity and a platform to identify and utilize new electronic phases 
650 4 |a Journal Article 
650 4 |a molecular beam epitaxy 
650 4 |a quantum materials 
650 4 |a topological materials 
650 4 |a topological superconductor 
700 1 |a Lu, Qiangsheng  |e verfasserin  |4 aut 
700 1 |a Hershkovitz, Eitan  |e verfasserin  |4 aut 
700 1 |a Crespillo, Miguel L  |e verfasserin  |4 aut 
700 1 |a Mazza, Alessandro R  |e verfasserin  |4 aut 
700 1 |a Smith, Tyler  |e verfasserin  |4 aut 
700 1 |a Ward, T Zac  |e verfasserin  |4 aut 
700 1 |a Eres, Gyula  |e verfasserin  |4 aut 
700 1 |a Gandhi, Shornam  |e verfasserin  |4 aut 
700 1 |a Mahfuz, Meer Muhtasim  |e verfasserin  |4 aut 
700 1 |a Starchenko, Vitalii  |e verfasserin  |4 aut 
700 1 |a Hattar, Khalid  |e verfasserin  |4 aut 
700 1 |a Lee, Joon Sue  |e verfasserin  |4 aut 
700 1 |a Kim, Honggyu  |e verfasserin  |4 aut 
700 1 |a Moore, Robert G  |e verfasserin  |4 aut 
700 1 |a Brahlek, Matthew  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 31 vom: 07. Aug., Seite e2401809  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:36  |g year:2024  |g number:31  |g day:07  |g month:08  |g pages:e2401809 
856 4 0 |u http://dx.doi.org/10.1002/adma.202401809  |3 Volltext 
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