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240501s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202314292
|2 doi
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|a pubmed24n1474.xml
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|a (DE-627)NLM371728568
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|a (NLM)38684071
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Park, Jae Yong
|e verfasserin
|4 aut
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|a A Lead-Free Ferroelectric 2D Dion-Jacobson Tin Iodide Perovskite
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 18.07.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.
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|a 2D hybrid organic-inorganic halide perovskites emerge as a new class of 2D semiconductors with the potential to combine excellent optoelectronic properties with symmetry-enabled properties such as ferroelectricity. Although many lead-based ferroelectric 2D halide perovskites are reported, there is yet to be a conclusive report of ferroelectricity in tin-based 2D perovskites. Here, the structures and properties of a new series of 2D Dion-Jacobson (DJ) Sn perovskites: (4AMP)SnI4, (4AMP)(MA)Sn2I7, and (4AMP)(FA)Sn2I7 (4AMP = 4-(aminomethyl)piperidinium, MA = methylammonium, and FA = formamidinium), are reported. Structural characterization reveals that (4AMP)SnI4 is polar with in-plane spontaneous polarization whereas (4AMP)(MA)Sn2I7 and (4AMP)(FA)Sn2I7 are centrosymmetric. Further, (4AMP)SnI4 displays second harmonic generation (SHG) and polarization-electric field hysteresis measurements confirm it is ferroelectric with a spontaneous polarization of 10.0 µC cm-2 at room temperature. (4AMP)SnI4 transitions into a centrosymmetric structure above 367 K. As the first direct experimental observation of the spontaneous ferroelectric polarization of a Sn-based 2D hybrid perovskite, this work opens up environmentally friendly 2D tin halide perovskites for ferroelectricity and other physical property studies
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|a Journal Article
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|a 2D
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|a ferroelectric semiconductor
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|a ferroelectrics
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|a lead‐free
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|a noncentrosymmetric
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|a tin halide perovskites
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|a Mihalyi-Koch, Willa
|e verfasserin
|4 aut
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|a Triggs, Christopher T
|e verfasserin
|4 aut
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|a Roy, Chris R
|e verfasserin
|4 aut
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|a Sanders, Kyana M
|e verfasserin
|4 aut
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|a Wright, John C
|e verfasserin
|4 aut
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|a Jin, Song
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 29 vom: 14. Juli, Seite e2314292
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:29
|g day:14
|g month:07
|g pages:e2314292
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|u http://dx.doi.org/10.1002/adma.202314292
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|d 36
|j 2024
|e 29
|b 14
|c 07
|h e2314292
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