Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5

Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 27 vom: 02. Juli, Seite e2401118
1. Verfasser: Zhao, Yi (VerfasserIn)
Weitere Verfasser: Ying, Tianping, Zhao, Lingxiao, Wu, Juefei, Pei, Cuiying, Chen, Jing, Deng, Jun, Zhang, Qinghua, Gu, Lin, Wang, Qi, Cao, Weizheng, Li, Changhua, Zhu, Shihao, Zhang, Mingxin, Yu, Na, Zhang, Lili, Chen, Yulin, Chen, Chui-Zhen, Yu, Tongxu, Qi, Yanpeng
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article amorphization and recrystallization high pressure phase boundaries superconductivity enhancement
LEADER 01000caa a22002652 4500
001 NLM371308313
003 DE-627
005 20240704232048.0
007 cr uuu---uuuuu
008 240420s2024 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202401118  |2 doi 
028 5 2 |a pubmed24n1460.xml 
035 |a (DE-627)NLM371308313 
035 |a (NLM)38641859 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Zhao, Yi  |e verfasserin  |4 aut 
245 1 0 |a Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In2Te5 
264 1 |c 2024 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 04.07.2024 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2024 Wiley‐VCH GmbH. 
520 |a As an empirical tool in materials science and engineering, the iconic phase diagram owes its robustness and practicality to the topological characteristics rooted in the celebrated Gibbs phase law free variables (F) = components (C) - phases (P) + 2. When crossing the phase diagram boundary, the structure transition occurs abruptly, bringing about an instantaneous change in physical properties and limited controllability on the boundaries (F = 1). Here, the sharp phase boundary is expanded to an amorphous transition region (F = 2) by partially disrupting the long-range translational symmetry, leading to a sequential crystalline-amorphous-crystalline (CAC) transition in a pressurized In2Te5 single crystal. Through detailed in situ synchrotron diffraction, it is elucidated that the phase transition stems from the rotation of immobile blocks [In2Te2]2+, linked by hinge-like [Te3]2- trimers. Remarkably, within the amorphous region, the amorphous phase demonstrates a notable 25% increase of the superconducting transition temperature (Tc), while the carrier concentration remains relatively constant. Furthermore, a theoretical framework is proposed revealing that the unconventional boost in amorphous superconductivity might be attributed to an intensified electron correlation, triggered by a disorder-augmented multifractal behavior. These findings underscore the potential of disorder and prompt further exploration of unforeseen phenomena on the phase boundaries 
650 4 |a Journal Article 
650 4 |a amorphization and recrystallization 
650 4 |a high pressure 
650 4 |a phase boundaries 
650 4 |a superconductivity enhancement 
700 1 |a Ying, Tianping  |e verfasserin  |4 aut 
700 1 |a Zhao, Lingxiao  |e verfasserin  |4 aut 
700 1 |a Wu, Juefei  |e verfasserin  |4 aut 
700 1 |a Pei, Cuiying  |e verfasserin  |4 aut 
700 1 |a Chen, Jing  |e verfasserin  |4 aut 
700 1 |a Deng, Jun  |e verfasserin  |4 aut 
700 1 |a Zhang, Qinghua  |e verfasserin  |4 aut 
700 1 |a Gu, Lin  |e verfasserin  |4 aut 
700 1 |a Wang, Qi  |e verfasserin  |4 aut 
700 1 |a Cao, Weizheng  |e verfasserin  |4 aut 
700 1 |a Li, Changhua  |e verfasserin  |4 aut 
700 1 |a Zhu, Shihao  |e verfasserin  |4 aut 
700 1 |a Zhang, Mingxin  |e verfasserin  |4 aut 
700 1 |a Yu, Na  |e verfasserin  |4 aut 
700 1 |a Zhang, Lili  |e verfasserin  |4 aut 
700 1 |a Chen, Yulin  |e verfasserin  |4 aut 
700 1 |a Chen, Chui-Zhen  |e verfasserin  |4 aut 
700 1 |a Yu, Tongxu  |e verfasserin  |4 aut 
700 1 |a Qi, Yanpeng  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 27 vom: 02. Juli, Seite e2401118  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:36  |g year:2024  |g number:27  |g day:02  |g month:07  |g pages:e2401118 
856 4 0 |u http://dx.doi.org/10.1002/adma.202401118  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 36  |j 2024  |e 27  |b 02  |c 07  |h e2401118