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240418s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202402325
|2 doi
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|a pubmed24n1460.xml
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|a (DE-627)NLM371207614
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|a (NLM)38631673
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Nong, Yingyi
|e verfasserin
|4 aut
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|a Boosting External Quantum Efficiency of Blue Perovskite QLEDs Exceeding 23% by Trifluoroacetate Passivation and Mixed Hole Transportation Design
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 04.07.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Perovskite quantum dot-based light-emitting diodes (QLEDs) have been considered a promising display technology due to their wide color gamut for authentic color expression. Currently, the external quantum efficiency (EQE) for state-of-the-art blue perovskite QLEDs is about 15%, which still lags behind its green and red counterparts (>25%) and blue film-based LEDs. Here, blue perovskite QLEDs that achieve an EQE of 23.5% at 490 nm is presented, to the best knowledge, which is the highest value reported among blue perovskite-based LED fields. This impressive efficiency is achieved through a combination of quantum dot (QD) passivation and optimal device design. First, blue mixed halide perovskite CsPbCl3- xBrx QDs passivated by trifluoroacetate exhibit excellent exciton recombination behavior with a photoluminescence quantum yield of 84% due to reducing uncoordinated Pb surface defects. Furthermore, the device is designed by introducing a mixed hole-transport layer (M-HTL) to increase hole injection and transportation capacity and improve carrier balance. It is further found that M-HTL can decrease carrier leakage and increase radiative recombination in the device, evidenced by the visual electroluminescence spectrum at 2.0 V. The work breaks through the EQE gap of 20% for blue perovskite-based QLEDs and significantly promotes their commercialization process
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|a Journal Article
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|a blue light‐emitting diodes
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|a device design
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|a ligand passivation
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|a mixed hole transporting layer
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|a perovskite quantum dots
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|a Yao, Jisong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Jiaqi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Leimeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Zhi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Chuang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Song, Jizhong
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 27 vom: 02. Juli, Seite e2402325
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:27
|g day:02
|g month:07
|g pages:e2402325
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|u http://dx.doi.org/10.1002/adma.202402325
|3 Volltext
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