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|a 10.1002/adma.202310831
|2 doi
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|a pubmed24n1439.xml
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|a (NLM)38553988
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Zhang, Yunxia
|e verfasserin
|4 aut
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|a Lead-Free Perovskite Single Crystal Linear Array Detector for High-Resolution X-Ray Imaging
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 13.06.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a 0D Bi-based 329-type halide perovskite is demonstrated as a promising semiconductor for X-ray detection due to its strong X-ray absorption, superior stability, availability of large single crystals (SCs) and solution processibility at low temperature. However, its low mobility-lifetime product (µτ) limits its further improvement in detection sensitivity. Based on the first-principles calculations, this work designs a new 2D Bi-based 329-type halide perovskite using a mixed-halide-induced structural dimension regulation strategy. By using a continuous supply of a precursor solution, this work successfully grows inch-sized high-quality SCs. These SCs exhibit large µτ product, high resistivity, and low ion migration. The detectors fabricated using the SCs show X-ray detection sensitivity as high as 24,509 µC Gyair -1 cm-2, short response time of 315 µs, low detection limit of 4.3 nGy s-1, and superior stability. These properties are the best among all lead-free perovskite detectors and are comparable to those of the best lead-based perovskite detectors. The linear array detector assembled on the SCs for the first time also shows a high spatial resolution of 10.6 lp mm-1 during X-ray imaging. The high performance combined with superior stability of these new 329-type lead-free halide perovskite SCs is expected to promote a new generation of X-ray detection technologies
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|a Journal Article
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|a X‐ray imaging
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|a lead‐free
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|a linear array detector
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|a perovskite
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|a single crystal
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|a Hao, Jinglu
|e verfasserin
|4 aut
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1 |
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|a Zhao, Zeqin
|e verfasserin
|4 aut
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1 |
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|a Pi, Jiacheng
|e verfasserin
|4 aut
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|a Shi, Ruixin
|e verfasserin
|4 aut
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|a Li, Xiaojun
|e verfasserin
|4 aut
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|a Yuan, Ningyi
|e verfasserin
|4 aut
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|a Ding, Jianning
|e verfasserin
|4 aut
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|a Liu, Shengzhong Frank
|e verfasserin
|4 aut
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|a Liu, Yucheng
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 24 vom: 10. Juni, Seite e2310831
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:24
|g day:10
|g month:06
|g pages:e2310831
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|u http://dx.doi.org/10.1002/adma.202310831
|3 Volltext
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