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240330s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202401114
|2 doi
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|a pubmed24n1453.xml
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|a (DE-627)NLM370389301
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|a (NLM)38549402
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|a DE-627
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|e rakwb
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|a eng
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|a Ouyang, Zhaofeng
|e verfasserin
|4 aut
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| 245 |
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|a Programmable DNA Interphase Layers for High-Performance Anode-Free Lithium Metal Batteries
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 26.06.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Anode-free lithium (Li) metal batteries are promising candidates for advanced energy storage, attributed to their appealing characteristics such as high energy density, low cost, and convenient production. However, their major challenges lie in the poor cycling and rate performance owing to the inferior reversibility and kinetics of Li plating and stripping, which significantly hinder their real-world applications. Here, it is demonstrated that deoxyribonucleic acid (DNA), the most important genetic material in nature, can serve as a highly programmable interphase layer for innovation of anode-free Li metal batteries. It is found that the abundant base pairs in DNA can contribute transient Li-N bonds that facilitate homogeneous Li+ flux, thus resulting in excellent Li plating/stripping kinetics and reversibility even at a harsh areal current of 15 mA cm-2. The anode-free LiFePO4 full batteries based on an ultrathin (0.12 µm) and ultralight (≈0.01 mg cm-2) DNA interphase layer show high CEs (≈99.1%) over 400 cycles, corresponding to an increase of ≈186% compared with bare copper (Cu) foil. These results shed light on the excellent programmability of DNA as a new family of interphase materials for anode-free batteries, and provide a new paradigm for future battery innovation toward high programmability, high sustainability, and remarkable electrochemical performance
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|a Journal Article
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|a DNA interphase layer
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|a anode‐free battery
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|a high programmability
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|a high reversibility
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|a ultrathin interphase layer
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|a Wang, Yan
|e verfasserin
|4 aut
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|a Wang, Shuo
|e verfasserin
|4 aut
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|a Geng, Shitao
|e verfasserin
|4 aut
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|a Zhao, Xiaoju
|e verfasserin
|4 aut
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|a Zhang, Xiao
|e verfasserin
|4 aut
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|a Xu, Qiuchen
|e verfasserin
|4 aut
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|a Yuan, Bin
|e verfasserin
|4 aut
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|a Tang, Shanshan
|e verfasserin
|4 aut
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|a Li, Jun
|e verfasserin
|4 aut
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|a Wang, Fei
|e verfasserin
|4 aut
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|a Yao, Guangbao
|e verfasserin
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| 700 |
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|a Sun, Hao
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 26 vom: 26. Juni, Seite e2401114
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:26
|g day:26
|g month:06
|g pages:e2401114
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|u http://dx.doi.org/10.1002/adma.202401114
|3 Volltext
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