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240329s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202304772
|2 doi
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|a pubmed25n1233.xml
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|a (DE-627)NLM370354974
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|a (NLM)38545966
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Jiang, Jiangyuan
|e verfasserin
|4 aut
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|a High-Color-Rendition White QLEDs by Balancing Red, Green and Blue Centres in Eco-Friendly ZnCuGaS:InZnS Quantum Dots
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 24.05.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a White light-emitting diodes (WLEDs) are the key components in the next-generation lighting and display devices. The inherent toxicity of Cd/Pb-based quantum dots (QDs) limits the further application in WLEDs. Recently, more attention is focused on eco-friendly QDs and their WLEDs, especially the phosphor-free WLEDs based on mono-component, which profits from bias-insensitive color stability. However, the imbalanced carrier distribution between red-green-blue luminescent centers, even the absence of a certain luminescent center, hinders their balanced and stable photoluminescence/electroluminescence (PL/EL). Here, an In3+-doped strategy in Zn-Cu-Ga-SZnS QDs is first proposed, and the balanced carrier distribution is realized by non-equivalent substitution and In3+ doping concentration modulation. The alleviation of the green emitter by the In3+-related red emitter and the compensation of blue emitter by the Zn-related electronic states contribute to the balanced red-green-blue emitting with high PL quantum yield (PLQY) of 95.3% and long lifetime (T90) of over 1100 h in atmospheric conditions. Thus, the In3+-doped WLEDs can achieve exceedingly slight proportional variations between red-green-blue EL intensity over time (∆CIE = (0.007, 0.009)), and high champion CRI of 94.9. This study proposes a single-component QD with balanced and stable red-green-blue PL/EL spectrum, meeting the requirements of lighting and display
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|a Journal Article
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|a In3+ doping
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4 |
|a luminescence mechanism
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| 650 |
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|a red‐green‐blue emitting centers
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4 |
|a stable electroluminescence spectra
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| 650 |
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4 |
|a white light‐emitting diodes
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| 700 |
1 |
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|a Zhang, Shuai
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shan, Qingsong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Linxiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ren, Jing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yongjin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jeon, Seokwoo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xiang, Hengyang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Haibo
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 21 vom: 25. Mai, Seite e2304772
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:21
|g day:25
|g month:05
|g pages:e2304772
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202304772
|3 Volltext
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|d 36
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