In Situ Synthesized Low-Dimensional Perovskite for >25% Efficiency Stable MA-Free Perovskite Solar Cells

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 21 vom: 25. Mai, Seite e2310711
1. Verfasser: Li, Yong (VerfasserIn)
Weitere Verfasser: Duan, Yuwei, Liu, Zhike, Yang, Lu, Li, Hongxiang, Fan, Qunping, Zhou, Hui, Sun, Yiqiao, Wu, Meizi, Ren, Xiaodong, Yuan, Ningyi, Ding, Jianning, Yang, Shaoming, Liu, Shengzhong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D/3D perovskite addition reaction defect passivation stress release
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520 |a Developing an additive to effectively regulate the perovskite crystallization kinetics for the optimized optoelectronic properties of perovskite film plays a vital role in obtaining high efficiency and stable perovskite solar cells (PSCs). Herein, a new additive is designed and directly synthesized in perovskite precursor solution by utilizing an addition reaction between but-3-yn-1-amine hydrochloride (BAH) and formamidinium iodide. It is found that its product may control the intermediate precursor phase for regulating perovskite nucleation, leading to advantageous 2D perovskite to induce growth of perovskite along the preferred [001] orientation with not only released lattice strain but also strong interaction with perovskite to passivate its surface defects. By taking advantage of the above synergistic effects, the optimized PSC delivers an efficiency of 25.19% and a high open-circuit voltage (VOC) of 1.22 V. Additionally, the devices demonstrate good stability, remaining over 90% of their initial efficiencies under ambient atmosphere conditions for 60 days, high temperature of 85 °C for 200 h, or maximum power point tracking for 500 h 
650 4 |a Journal Article 
650 4 |a 2D/3D perovskite 
650 4 |a addition reaction 
650 4 |a defect passivation 
650 4 |a stress release 
700 1 |a Duan, Yuwei  |e verfasserin  |4 aut 
700 1 |a Liu, Zhike  |e verfasserin  |4 aut 
700 1 |a Yang, Lu  |e verfasserin  |4 aut 
700 1 |a Li, Hongxiang  |e verfasserin  |4 aut 
700 1 |a Fan, Qunping  |e verfasserin  |4 aut 
700 1 |a Zhou, Hui  |e verfasserin  |4 aut 
700 1 |a Sun, Yiqiao  |e verfasserin  |4 aut 
700 1 |a Wu, Meizi  |e verfasserin  |4 aut 
700 1 |a Ren, Xiaodong  |e verfasserin  |4 aut 
700 1 |a Yuan, Ningyi  |e verfasserin  |4 aut 
700 1 |a Ding, Jianning  |e verfasserin  |4 aut 
700 1 |a Yang, Shaoming  |e verfasserin  |4 aut 
700 1 |a Liu, Shengzhong  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 21 vom: 25. Mai, Seite e2310711  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
773 1 8 |g volume:36  |g year:2024  |g number:21  |g day:25  |g month:05  |g pages:e2310711 
856 4 0 |u http://dx.doi.org/10.1002/adma.202310711  |3 Volltext 
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