Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 24 vom: 01. Juni, Seite e2311652
1. Verfasser:	Wang, Hao (VerfasserIn)
Weitere Verfasser:	Guo, Hui, Guzman, Roger, JiaziLa, Nuertai, Wu, Kang, Wang, Aiwei, Liu, Xuanye, Liu, Li, Wu, Liangmei, Chen, Jiancui, Huan, Qing, Zhou, Wu, Yang, Haitao, Pantelides, Sokrates T, Bao, Lihong, Gao, Hong-Jun
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2024
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article 2D materials logic gates ultrafast non‐volatile floating‐gate memory van der Waals heterostructures

Beschreibung
Zusammenfassung:	© 2024 Wiley‐VCH GmbH. The explosive growth of massive-data storage and the demand for ultrafast data processing require innovative memory devices with exceptional performance. 2D materials and their van der Waal heterostructures with atomically sharp interfaces hold great promise for innovations in memory devices. Here, this work presents non-volatile, floating-gate memory devices with all functional layers made of 2D materials, achieving ultrafast programming/erasing speeds (20 ns), high extinction ratios (up to 108), and multi-bit storage capability. These devices also exhibit long-term data retention exceeding 10 years, facilitated by a high gate-coupling ratio (GCR) and atomically sharp interfaces between functional layers. Additionally, this work demonstrates the realization of an "OR" logic gate on a single-device unit by synergistic electrical and optical operations. The present results provide a solid foundation for next-generation ultrahigh-speed, ultralong lifespan, non-volatile memory devices, with a potential for scale-up manufacturing and flexible electronics applications
Beschreibung:	Date Revised 13.06.2024 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202311652