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240315s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202309256
|2 doi
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|a pubmed24n1439.xml
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|a (DE-627)NLM369690877
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|a (NLM)38479377
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|a DE-627
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|a eng
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|a Gao, Chenying
|e verfasserin
|4 aut
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|a Nonhalogenated Solvent Processable and High-Density Photopatternable Polymer Semiconductors Enabled by Incorporating Hydroxyl Groups in the Side Chains
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 13.06.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Polymer semiconductors hold tremendous potential for applications in flexible devices, which is however hindered by the fact that they are usually processed by halogenated solvents rather than environmentally more friendly solvents. An effective strategy to boost the solubility of high-performance polymer semiconductors in nonhalogenated solvents such as tetrahydrofuran (THF) by appending hydroxyl groups in the side chains is herein presented. The results show that hydroxyl groups, which can be easily incorporated into the side chains, can significantly improve the solubility of typical p- and n-types as well as ambipolar polymer semiconductors in THF. Meanwhile, the thin films of these polymer semiconductors from the respective THF solutions show high charge mobilities. With THF as the processing and developing solvents these polymer semiconductors with hydroxyl groups in the side chains can be well photopatterned in the presence of the photo-crosslinker, and the charge mobilities of the patterned thin films are mostly maintained by comparing with those of the respective pristine thin films. Notably, THF is successfully utilized as the processing and developing solvent to achieve high-density photopatterning with ≈82 000 device arrays cm-2 for polymer semiconductors in which hydroxyl groups are appended in the side chains
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|a Journal Article
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|a nonhalogenated solvents
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|a organic field effect transistors
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|a photopatterning
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|a polymer semiconductors
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|a Li, Cheng
|e verfasserin
|4 aut
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|a Yang, Yiming
|e verfasserin
|4 aut
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|a Jiang, Ziling
|e verfasserin
|4 aut
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|a Xue, Xiang
|e verfasserin
|4 aut
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|a Chenchai, Kaiyuan
|e verfasserin
|4 aut
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| 700 |
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|a Liao, Junchao
|e verfasserin
|4 aut
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|a Shangguan, Zhichun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Changchun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Xisha
|e verfasserin
|4 aut
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| 700 |
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|a Jia, Di
|e verfasserin
|4 aut
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|a Zhang, Fengjiao
|e verfasserin
|4 aut
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| 700 |
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|a Liu, Guoming
|e verfasserin
|4 aut
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|a Zhang, Guanxin
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Deqing
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 24 vom: 01. Juni, Seite e2309256
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:24
|g day:01
|g month:06
|g pages:e2309256
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|u http://dx.doi.org/10.1002/adma.202309256
|3 Volltext
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