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240315s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202308550
|2 doi
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|a pubmed24n1439.xml
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|a (DE-627)NLM369684389
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|a (NLM)38478729
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Zhang, Xingxing
|e verfasserin
|4 aut
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| 245 |
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|a Scalable Synthesis of High-Quality Ultrathin Ferroelectric Magnesium Molybdenum Oxide
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 13.06.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a The development of ultrathin, stable ferroelectric materials is crucial for advancing high-density, low-power electronic devices. Nonetheless, ultrathin ferroelectric materials are rare due to the critical size effect. Here, a novel ferroelectric material, magnesium molybdenum oxide (Mg2Mo3O8) is presented. High-quality ultrathin Mg2Mo3O8 crystals are synthesized using chemical vapor deposition (CVD). Ultrathin Mg2Mo3O8 has a wide bandgap (≈4.4 eV) and nonlinear optical response. Mg2Mo3O8 crystals of varying thicknesses exhibit out-of-plane ferroelectric properties at room temperature, with ferroelectricity retained even at a 2 nm thickness. The Mg2Mo3O8 exhibits a relatively large remanent polarization ranging from 33 to 52 µC cm- 2, which is tunable by changing its thickness. Notably, Mg2Mo3O8 possesses a high Curie temperature (>980 °C) across various thicknesses. Moreover, the as-grown Mg2Mo3O8 crystals display remarkable stability under harsh environments. This work introduces nolanites-type crystal into ultrathin ferroelectrics. The scalable synthesis of stable ultrathin ferroelectric Mg2Mo3O8 expands the scope of ferroelectric materials and may prosper applications of ferroelectrics
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|a Journal Article
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|a Mg2Mo3O8
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|a chemical vapor deposition
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|a nolanites
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|a ultrathin ferroelectric materials
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|a Cheng, Mo
|e verfasserin
|4 aut
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|a Dai, Jiuxiang
|e verfasserin
|4 aut
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|a Yang, Qianqian
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|4 aut
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|a Zhang, Ye
|e verfasserin
|4 aut
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|a Dong, Baojuan
|e verfasserin
|4 aut
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|a Tao, Xinwei
|e verfasserin
|4 aut
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|a Zou, Jingyi
|e verfasserin
|4 aut
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|a Jin, Zhitong
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|4 aut
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|a Liu, Feng
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|4 aut
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|a Wu, Zhenghan
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|4 aut
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|a Hu, Xianyu
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|4 aut
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|a Zheng, Zemin
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|4 aut
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|a Shi, Zhiwen
|e verfasserin
|4 aut
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|a Jiang, Shengwei
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|4 aut
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|a Zhang, Linxing
|e verfasserin
|4 aut
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|a Yang, Teng
|e verfasserin
|4 aut
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|a Zhang, Xu
|e verfasserin
|4 aut
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|a Zhou, Lin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 24 vom: 31. Juni, Seite e2308550
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:24
|g day:31
|g month:06
|g pages:e2308550
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|u http://dx.doi.org/10.1002/adma.202308550
|3 Volltext
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