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240308s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202313524
|2 doi
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|a pubmed24n1439.xml
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|a (DE-627)NLM369434099
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|a (NLM)38453665
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|a DE-627
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|a eng
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|a Jiang, Xiaofen
|e verfasserin
|4 aut
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|a Top-Down Induced Crystallization Orientation toward Highly Efficient p-i-n Perovskite Solar Cells
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 13.06.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Crystallization orientation plays a crucial role in determining the performance and stability of perovskite solar cells (PVSCs), whereas effective strategies for realizing oriented perovskite crystallization is still lacking. Herein, a facile and efficient top-down strategy is reported to manipulate the crystallization orientation via treating perovskite wet film with propylamine chloride (PACl) before annealing. The PA+ ions tend to be adsorbed on the (001) facet of the perovskite surface, resulting in the reduced cleavage energy to induce (001) orientation-dominated growth of perovskite film and then reduce the temperature of phase transition, meanwhile, the penetrating Cl ions further regulate the crystallization process. As-prepared (001)-dominant perovskite films exhibit the ameliorative film homogeneity in terms of vertical and horizontal scale, leading to alleviated lattice mismatch and lowered defect density. The resultant PVSC devices deliver a champion power conversion efficiency (PCE) of 25.07% with enhanced stability, and the unencapsulated PVSC device maintains 95% of its initial PCE after 1000 h of operation at the maximum power point under simulated AM 1.5G illumination
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|a Journal Article
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|a crystallization orientation
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|a homogeneity
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|a p‐i‐n perovskite solar cells
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|a top‐down engineering
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|a Liu, Baoze
|e verfasserin
|4 aut
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|a Wu, Xin
|e verfasserin
|4 aut
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|a Zhang, Shoufeng
|e verfasserin
|4 aut
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|a Zhang, Dong
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|4 aut
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|a Wang, Xue
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|4 aut
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|a Gao, Shuang
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|4 aut
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|a Huang, Zongming
|e verfasserin
|4 aut
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|a Wang, Haolin
|e verfasserin
|4 aut
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|a Li, Bo
|e verfasserin
|4 aut
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|a Xiao, Zhengguo
|e verfasserin
|4 aut
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|a Chen, Tao
|e verfasserin
|4 aut
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|a Jen, Alex K-Y
|e verfasserin
|4 aut
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|a Xiao, Shuang
|e verfasserin
|4 aut
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|a Yang, Shangfeng
|e verfasserin
|4 aut
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|a Zhu, Zonglong
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 24 vom: 08. Juni, Seite e2313524
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:24
|g day:08
|g month:06
|g pages:e2313524
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|u http://dx.doi.org/10.1002/adma.202313524
|3 Volltext
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