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240304s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202302624
|2 doi
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|a pubmed25n1230.xml
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|a (DE-627)NLM369216660
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|a (NLM)38431796
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
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|a Zeglio, Erica
|e verfasserin
|4 aut
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|a Mixing Insulating Commodity Polymers with Semiconducting n-type Polymers Enables High-Performance Electrochemical Transistors
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 07.06.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.
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|a Diluting organic semiconductors with a host insulating polymer is used to increase the electronic mobility in organic electronic devices, such as thin film transistors, while considerably reducing material costs. In contrast to organic electronics, bioelectronic devices such as the organic electrochemical transistor (OECT) rely on both electronic and ionic mobility for efficient operation, making it challenging to integrate hydrophobic polymers as the predominant blend component. This work shows that diluting the n-type conjugated polymer p(N-T) with high molecular weight polystyrene (10 KDa) leads to OECTs with over three times better mobility-volumetric capacitance product (µC*) with respect to the pristine p(N-T) (from 4.3 to 13.4 F V-1 cm-1 s-1) while drastically decreasing the amount of conjugated polymer (six times less). This improvement in µC* is due to a dramatic increase in electronic mobility by two orders of magnitude, from 0.059 to 1.3 cm2 V-1 s-1 for p(N-T):Polystyrene 10 KDa 1:6. Moreover, devices made with this polymer blend show better stability, retaining 77% of the initial drain current after 60 minutes operation in contrast to 12% for pristine p(N-T). These results open a new generation of low-cost organic mixed ionic-electronic conductors where the bulk of the film is made by a commodity polymer
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|a Journal Article
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|a conjugated polymer
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|a diluted organic semiconductors
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|a organic bioelectronics
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|a organic electrochemical transistor
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|a organic mixed ionic‐electronic conductor
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|a Wang, Yazhou
|e verfasserin
|4 aut
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|a Jain, Saumey
|e verfasserin
|4 aut
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|a Lin, Yunfan
|e verfasserin
|4 aut
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|a Avila Ramirez, Alan Eduardo
|e verfasserin
|4 aut
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|a Feng, Kui
|e verfasserin
|4 aut
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| 700 |
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|a Guo, Xugang
|e verfasserin
|4 aut
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| 700 |
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|a Ose, Helena
|e verfasserin
|4 aut
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|a Mozolevskis, Gatis
|e verfasserin
|4 aut
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|a Mawad, Damia
|e verfasserin
|4 aut
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|a Yue, Wan
|e verfasserin
|4 aut
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|a Hamedi, Mahiar Max
|e verfasserin
|4 aut
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|a Herland, Anna
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 23 vom: 04. Juni, Seite e2302624
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:36
|g year:2024
|g number:23
|g day:04
|g month:06
|g pages:e2302624
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|u http://dx.doi.org/10.1002/adma.202302624
|3 Volltext
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