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|a 10.1002/adma.202313835
|2 doi
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|a pubmed24n1432.xml
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|a (DE-627)NLM369177304
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|a (NLM)38427844
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|a DE-627
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|a eng
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|a Zhang, Longhai
|e verfasserin
|4 aut
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|a Rational Design of Multinary Metal Chalcogenide Bi0.4Sb1.6Te3 Nanocrystals for Efficient Potassium Storage
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 07.06.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Multinary metal chalcogenides hold considerable promise for high-energy potassium storage due to their numerous redox reactions. However, challenges arise from issues such as volume expansion and sluggish kinetics. Here, a design featuring a layered ternary Bi0.4Sb1.6Te3 anchored on graphene layers as a composite anode, where Bi atoms act as a lattice softening agent on Sb, is presented. Benefiting from the lattice arrangement in Bi0.4Sb1.6Te3 and structure, Bi0.4Sb1.6Te3/graphene exhibits a mitigated expansion of 28% during the potassiation/depotassiation process and demonstrates facile K+ ion transfer kinetics, enabling long-term durability of 500 cycles at various high rates. Operando synchrotron diffraction patterns and spectroscopies including in situ Raman, ex situ adsorption, and X-ray photoelectron reveal multiple conversion and alloying/dealloying reactions for potassium storage at the atomic level. In addition, both theoretical calculations and electrochemical examinations elucidate the K+ migration pathways and indicate a reduction in energy barriers within Bi0.4Sb1.6Te3/graphene, thereby suggesting enhanced diffusion kinetics for K+. These findings provide insight in the design of durable high-energy multinary tellurides for potassium storage
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|a Journal Article
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|a Bi0.4Sb1.6Te3 anode
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|a multinary metal chalcogenide
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|a potassium ion batteries
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|a synergetic effect
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|a Liu, Jiatu
|e verfasserin
|4 aut
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1 |
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|a Zhai, Yunming
|e verfasserin
|4 aut
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|a Zhang, Shilin
|e verfasserin
|4 aut
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|a Wang, Wei
|e verfasserin
|4 aut
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|a Li, Guanjie
|e verfasserin
|4 aut
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|a Sun, Liang
|e verfasserin
|4 aut
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|a Li, Hongbao
|e verfasserin
|4 aut
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|a Qi, Shuo
|e verfasserin
|4 aut
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|a Chen, Shuangqiang
|e verfasserin
|4 aut
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|a Wang, Rui
|e verfasserin
|4 aut
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|a Ma, Quanwei
|e verfasserin
|4 aut
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|a Just, Justus
|e verfasserin
|4 aut
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|a Zhang, Chaofeng
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 23 vom: 28. Juni, Seite e2313835
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:36
|g year:2024
|g number:23
|g day:28
|g month:06
|g pages:e2313835
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|u http://dx.doi.org/10.1002/adma.202313835
|3 Volltext
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