Epitaxial Growth of Large-Scale 2D CrTe2 Films on Amorphous Silicon Wafers With Low Thermal Budget

Epitaxial Growth of Large-Scale 2D CrTe2 Films on Amorphous Silicon Wafers With Low Thermal Budget

© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 24 vom: 08. Juni, Seite e2311591
1. Verfasser: Zhang, Xiaoqian (VerfasserIn)
Weitere Verfasser: Li, Yue, Lu, Qiangsheng, Xiang, Xueqiang, Sun, Xiaozhen, Tang, Chunli, Mahdi, Muntasir, Conner, Clayton, Cook, Jacob, Xiong, Yuzan, Inman, Jerad, Jin, Wencan, Liu, Chang, Cai, PeiYu, Santos, Elton J G, Phatak, Charudatta, Zhang, Wei, Gao, Nan, Niu, Wei, Bian, Guang, Li, Peng, Yu, Dapeng, Long, Shibing
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D magnetic thin films Néel‐type domain dynamics amorphous substrates low thermal budget spin–orbit torque
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520 |a 2D van der Waals (vdW) magnets open landmark horizons in the development of innovative spintronic device architectures. However, their fabrication with large scale poses challenges due to high synthesis temperatures (>500 °C) and difficulties in integrating them with standard complementary metal-oxide semiconductor (CMOS) technology on amorphous substrates such as silicon oxide (SiO2) and silicon nitride (SiNx). Here, a seeded growth technique for crystallizing CrTe2 films on amorphous SiNx/Si and SiO2/Si substrates with a low thermal budget is presented. This fabrication process optimizes large-scale, granular atomic layers on amorphous substrates, yielding a substantial coercivity of 11.5 kilo-oersted, attributed to weak intergranular exchange coupling. Field-driven Néel-type stripe domain dynamics explain the amplified coercivity. Moreover, the granular CrTe2 devices on Si wafers display significantly enhanced magnetoresistance, more than doubling that of single-crystalline counterparts. Current-assisted magnetization switching, enabled by a substantial spin-orbit torque with a large spin Hall angle (85) and spin Hall conductivity (1.02 ×  107 ℏ/2e  Ω⁻¹  m⁻¹), is also demonstrated. These observations underscore the proficiency in manipulating crystallinity within integrated 2D magnetic films on Si wafers, paving the way for large-scale batch manufacturing of practical magnetoelectronic and spintronic devices, heralding a new era of technological innovation 
650 4 |a Journal Article 
650 4 |a 2D magnetic thin films 
650 4 |a Néel‐type domain dynamics 
650 4 |a amorphous substrates 
650 4 |a low thermal budget 
650 4 |a spin–orbit torque 
700 1 |a Li, Yue  |e verfasserin  |4 aut 
700 1 |a Lu, Qiangsheng  |e verfasserin  |4 aut 
700 1 |a Xiang, Xueqiang  |e verfasserin  |4 aut 
700 1 |a Sun, Xiaozhen  |e verfasserin  |4 aut 
700 1 |a Tang, Chunli  |e verfasserin  |4 aut 
700 1 |a Mahdi, Muntasir  |e verfasserin  |4 aut 
700 1 |a Conner, Clayton  |e verfasserin  |4 aut 
700 1 |a Cook, Jacob  |e verfasserin  |4 aut 
700 1 |a Xiong, Yuzan  |e verfasserin  |4 aut 
700 1 |a Inman, Jerad  |e verfasserin  |4 aut 
700 1 |a Jin, Wencan  |e verfasserin  |4 aut 
700 1 |a Liu, Chang  |e verfasserin  |4 aut 
700 1 |a Cai, PeiYu  |e verfasserin  |4 aut 
700 1 |a Santos, Elton J G  |e verfasserin  |4 aut 
700 1 |a Phatak, Charudatta  |e verfasserin  |4 aut 
700 1 |a Zhang, Wei  |e verfasserin  |4 aut 
700 1 |a Gao, Nan  |e verfasserin  |4 aut 
700 1 |a Niu, Wei  |e verfasserin  |4 aut 
700 1 |a Bian, Guang  |e verfasserin  |4 aut 
700 1 |a Li, Peng  |e verfasserin  |4 aut 
700 1 |a Yu, Dapeng  |e verfasserin  |4 aut 
700 1 |a Long, Shibing  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 24 vom: 08. Juni, Seite e2311591  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnns 
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