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240229s2024 xx |||||o 00| ||eng c |
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|a 10.1021/acs.langmuir.3c04018
|2 doi
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|a eng
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|a Wang, Z
|e verfasserin
|4 aut
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|a Surfactant-like Additives Assisted the Lateral Growth of Pentacene Films
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|c 2024
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|a Text
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|a ƒaComputermedien
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|a Date Revised 12.03.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a Lateral growth of thin films is crucial for organic electronic devices, such as field-effect transistors. Here, we report a strategy to improve the lateral growth of pentacene films using rubrene as a surfactant-like additive. Atomic force microscopy (AFM) images confirm the enhanced lateral growth with the presence of rubrene, resulting in smooth and enlarged molecule domains in the films in comparison to those without rubrene. Molecular dynamics simulations are conducted to explore the interlayer diffusion of pentacene molecules during the growth. With the rubrene molecules as surfactant-like additives, mean square displacement (MSD) analysis shows that the pentacene molecules have a descending diffusion coefficient of 2.0 × 10-5 cm2 s-1, which is greater than the ascending diffusion coefficient of 1.6 × 10-5 cm2 s-1. The more descending molecules lead to an enhanced lateral growth of pentacene films, which is in good agreement with the experiments. As a result, the pentacene films grown with rubrene exhibit a rapid increase in carrier mobility over thickness due to the well-connected domains resulting from enhanced lateral growth. This finding will provide a new strategy to modulate the morphology of organic films for high-performance devices
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|a Journal Article
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1 |
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|a Zhong, Q
|e verfasserin
|4 aut
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1 |
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|a Zhang, C
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, L
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, W
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chi, L
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Langmuir : the ACS journal of surfaces and colloids
|d 1992
|g 40(2024), 10 vom: 12. März, Seite 5462-5468
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|g volume:40
|g year:2024
|g number:10
|g day:12
|g month:03
|g pages:5462-5468
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|u http://dx.doi.org/10.1021/acs.langmuir.3c04018
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