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240222s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202312473
|2 doi
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|a pubmed24n1417.xml
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|a (DE-627)NLM368756076
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|a (NLM)38385598
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|a DE-627
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|a eng
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|a Liu, Xu
|e verfasserin
|4 aut
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|a All-Photolithography Fabrication of Ion-Gated Flexible Organic Transistor Array for Multimode Neuromorphic Computing
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|c 2024
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 24.05.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Organic ion-gated transistors (OIGTs) demonstrate commendable performance for versatile neuromorphic systems. However, due to the fragility of organic materials to organic solvents, efficient and reliable all-photolithography methods for scalable manufacturing of high-density OIGT arrays with multimode neuromorphic functions are still missing, especially when all active layers are patterned in high-density. Here, a flexible high-density (9662 devices per cm2) OIGT array with high yield and minimal device-to-device variation is fabricated by a modified all-photolithography method. The unencapsulated flexible array can withstand 1000 times' bending at a radius of 1 mm, and 3 months' storage test in air, without obvious performance degradation. More interesting, the OIGTs can be configured between volatile and nonvolatile modes, suitable for constructing reservoir computing systems to achieve high accuracy in classifying handwritten digits with low training costs. This work proposes a promising design of organic and flexible electronics for affordable neuromorphic systems, encompassing both array and algorithm aspects
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|a Journal Article
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|a all‐photolithography
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|a ion‐gated transistors
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|a multimode neuromorphic performance
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|a neuromorphic computing
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|a reservoir computing
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|a Dai, Shilei
|e verfasserin
|4 aut
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|a Zhao, Weidong
|e verfasserin
|4 aut
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|a Zhang, Junyao
|e verfasserin
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|a Guo, Ziyi
|e verfasserin
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|a Wu, Yue
|e verfasserin
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|a Xu, Yutong
|e verfasserin
|4 aut
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|a Sun, Tongrui
|e verfasserin
|4 aut
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|a Li, Li
|e verfasserin
|4 aut
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|a Guo, Pu
|e verfasserin
|4 aut
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|a Yang, Jie
|e verfasserin
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|a Hu, Huawei
|e verfasserin
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|a Zhou, Junhe
|e verfasserin
|4 aut
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|a Zhou, Peng
|e verfasserin
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|a Huang, Jia
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 21 vom: 15. Mai, Seite e2312473
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:21
|g day:15
|g month:05
|g pages:e2312473
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|u http://dx.doi.org/10.1002/adma.202312473
|3 Volltext
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|d 36
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