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240220s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202314005
|2 doi
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|a pubmed25n1228.xml
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|a (DE-627)NLM368658252
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|a (NLM)38375769
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|a DE-627
|b ger
|c DE-627
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|a eng
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|a Xiong, Zhile
|e verfasserin
|4 aut
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|a Switchable Anisotropic/Isotropic Photon Transport in a Double-Dipole Metal-Organic Framework via Radical-Controlled Energy Transfer
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 24.05.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Directional control of photon transport at micro/nanoscale holds great potential in developing multifunctional optoelectronic devices. Here, the switchable anisotropic/isotropic photon transport is reported in a double-dipole metal-organic framework (MOF) based on radical-controlled energy transfer. Double-dipole MOF microcrystals with transition dipole moments perpendicular to each other have been achieved by the pillared-layer coordination strategy. The energy transfer between the double dipolar chromophores can be modulated by the photogenerated radicals, which permits the in situ switchable output on both polarization (isotropy/anisotropy state) and wavelength information (blue/red-color emission). On this basis, the original MOF microcrystal with isotropic polarization state displays the isotropic photon transport and similar reabsorption losses at various directions, while the radical-affected MOF microcrystal with anisotropic polarization state shows the anisotropic photon transport with distinct reabsorption losses at different directions, finally leading to the in situ switchable anisotropic/isotropic photon transport. These results offer a novel strategy for the development of MOF-based photonic devices with tunable anisotropic performance
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|a Journal Article
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|a MOF
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|a energy transfer
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|a mixed‐ligand framework
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|a photon transmission
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|a stimuli‐response
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|a Li, Yunbin
|e verfasserin
|4 aut
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1 |
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|a Yuan, Zhen
|e verfasserin
|4 aut
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1 |
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|a Liang, Jiashuai
|e verfasserin
|4 aut
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1 |
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|a Wang, Shuaiqi
|e verfasserin
|4 aut
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1 |
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|a Yang, Xue
|e verfasserin
|4 aut
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|a Xiang, Shengchang
|e verfasserin
|4 aut
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|a Lv, Yuanchao
|e verfasserin
|4 aut
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|a Chen, Banglin
|e verfasserin
|4 aut
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|a Zhang, Zhangjing
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 21 vom: 08. Mai, Seite e2314005
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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|g volume:36
|g year:2024
|g number:21
|g day:08
|g month:05
|g pages:e2314005
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|u http://dx.doi.org/10.1002/adma.202314005
|3 Volltext
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