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240220s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202401103
|2 doi
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|a pubmed25n1228.xml
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|a (DE-627)NLM368657973
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|a (NLM)38375740
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|a DE-627
|b ger
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|e rakwb
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|a eng
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|a Li, Xinhao
|e verfasserin
|4 aut
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|a Strain Regulation of Mixed-Halide Perovskites Enables High-Performance Wide-Bandgap Photovoltaics
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 07.06.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Wide-bandgap mixed-halogen perovskite materials are widely used as top cells in tandem solar cells. However, serious open-circuit voltage (Voc) loss restricts the power conversion efficiency (PCE) of wide-bandgap perovskite solar cells (PSCs). Herein, it is shown that the resulting methylammonium vacancies induce lattice distortion in methylammonium chloride-assisted perovskite film, resulting in an inhomogeneous halogen distribution and low Voc. Thus, a lattice strain regulation strategy is reported to fabricate high-performance wide-bandgap PSCs. Rubidium (Rb) cations are introduced to fill the A-site vacancy caused by the methylammonium volatilization, which alleviates shrinkage strain of the perovskite crystal. The reduced lattice distortion and increased halide ion migration barrier result in a homogeneous mixed-halide perovskite film. Due to improved carrier transport and suppressed nonradiative recombination, the Rb-treated wide-bandgap PSC (1.68 eV) achieves an excellent PCE of 21.72%, accompanied by a high Voc of 1.22 V. The resulting device maintains more than 90% of its initial PCE after 1500 h under 1-sun illumination conditions
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|a Journal Article
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|a homogeneous halogen distribution
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|a lattice strain
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|a mixed‐halogen perovskite
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|a open‐circuit voltage loss
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|a wide‐bandgap photovoltaics
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|a Li, Yifan
|e verfasserin
|4 aut
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1 |
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|a Feng, Yanxing
|e verfasserin
|4 aut
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1 |
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|a Qi, Jiahui
|e verfasserin
|4 aut
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1 |
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|a Shen, Jinliang
|e verfasserin
|4 aut
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|a Shi, Guodong
|e verfasserin
|4 aut
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|a Yang, Shaopeng
|e verfasserin
|4 aut
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|a Yuan, Mingjian
|e verfasserin
|4 aut
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|a He, Tingwei
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 23 vom: 07. Juni, Seite e2401103
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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|g volume:36
|g year:2024
|g number:23
|g day:07
|g month:06
|g pages:e2401103
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|u http://dx.doi.org/10.1002/adma.202401103
|3 Volltext
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