Strain Regulation of Mixed-Halide Perovskites Enables High-Performance Wide-Bandgap Photovoltaics

© 2024 Wiley‐VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 23 vom: 07. Juni, Seite e2401103
1. Verfasser: Li, Xinhao (VerfasserIn)
Weitere Verfasser: Li, Yifan, Feng, Yanxing, Qi, Jiahui, Shen, Jinliang, Shi, Guodong, Yang, Shaopeng, Yuan, Mingjian, He, Tingwei
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2024
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article homogeneous halogen distribution lattice strain mixed‐halogen perovskite open‐circuit voltage loss wide‐bandgap photovoltaics
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520 |a Wide-bandgap mixed-halogen perovskite materials are widely used as top cells in tandem solar cells. However, serious open-circuit voltage (Voc) loss restricts the power conversion efficiency (PCE) of wide-bandgap perovskite solar cells (PSCs). Herein, it is shown that the resulting methylammonium vacancies induce lattice distortion in methylammonium chloride-assisted perovskite film, resulting in an inhomogeneous halogen distribution and low Voc. Thus, a lattice strain regulation strategy is reported to fabricate high-performance wide-bandgap PSCs. Rubidium (Rb) cations are introduced to fill the A-site vacancy caused by the methylammonium volatilization, which alleviates shrinkage strain of the perovskite crystal. The reduced lattice distortion and increased halide ion migration barrier result in a homogeneous mixed-halide perovskite film. Due to improved carrier transport and suppressed nonradiative recombination, the Rb-treated wide-bandgap PSC (1.68 eV) achieves an excellent PCE of 21.72%, accompanied by a high Voc of 1.22 V. The resulting device maintains more than 90% of its initial PCE after 1500 h under 1-sun illumination conditions 
650 4 |a Journal Article 
650 4 |a homogeneous halogen distribution 
650 4 |a lattice strain 
650 4 |a mixed‐halogen perovskite 
650 4 |a open‐circuit voltage loss 
650 4 |a wide‐bandgap photovoltaics 
700 1 |a Li, Yifan  |e verfasserin  |4 aut 
700 1 |a Feng, Yanxing  |e verfasserin  |4 aut 
700 1 |a Qi, Jiahui  |e verfasserin  |4 aut 
700 1 |a Shen, Jinliang  |e verfasserin  |4 aut 
700 1 |a Shi, Guodong  |e verfasserin  |4 aut 
700 1 |a Yang, Shaopeng  |e verfasserin  |4 aut 
700 1 |a Yuan, Mingjian  |e verfasserin  |4 aut 
700 1 |a He, Tingwei  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 23 vom: 07. Juni, Seite e2401103  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:36  |g year:2024  |g number:23  |g day:07  |g month:06  |g pages:e2401103 
856 4 0 |u http://dx.doi.org/10.1002/adma.202401103  |3 Volltext 
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