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240220s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202309940
|2 doi
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|a pubmed25n1228.xml
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|a (DE-627)NLM368634671
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|a (NLM)38373410
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Deng, Yao
|e verfasserin
|4 aut
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| 245 |
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|a Intrinsic Defect-Driven Synergistic Synaptic Heterostructures for Gate-Free Neuromorphic Phototransistors
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 09.05.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a The optoelectronic synaptic devices based on two-dimensional (2D) materials offer great advances for future neuromorphic visual systems with dramatically improved integration density and power efficiency. The effective charge capture and retention are considered as one vital prerequisite to realizing the synaptic memory function. However, the current 2D synaptic devices are predominantly relied on materials with artificially-engineered defects or intricate gate-controlled architectures to realize the charge trapping process. These approaches, unfortunately, suffer from the degradation of pristine materials, rapid device failure, and unnecessary complication of device structures. To address these challenges, an innovative gate-free heterostructure paradigm is introduced herein. The heterostructure presents a distinctive dome-like morphology wherein a defect-rich Fe7S8 core is enveloped snugly by a curved MoS2 dome shell (Fe7S8MoS2), allowing the realization of effective photocarrier trapping through the intrinsic defects in the adjacent Fe7S8 core. The resultant neuromorphic devices exhibit remarkable light-tunable synaptic behaviors with memory time up to ≈800 s under single optical pulse, thus demonstrating great advances in simulating visual recognition system with significantly improved image recognition efficiency. The emergence of such heterostructures foreshadows a promising trajectory for underpinning future synaptic devices, catalyzing the realization of high-efficiency and intricate visual processing applications
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|a Journal Article
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|a 2D materials
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| 650 |
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|a chemical vapor deposition
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| 650 |
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|a heterostructure
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| 650 |
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|a image recognition
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| 650 |
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4 |
|a optoelectronic synapse
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| 700 |
1 |
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|a Liu, Shenghong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ma, Xiaoxi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guo, Shuyang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhai, Baoxing
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Zihan
|e verfasserin
|4 aut
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| 700 |
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|a Li, Manshi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Yimeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Wenhua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Hui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kapitonov, Yury
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Han, Junbo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Jinsong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Yuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhai, Tianyou
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 19 vom: 01. Mai, Seite e2309940
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
8 |
|g volume:36
|g year:2024
|g number:19
|g day:01
|g month:05
|g pages:e2309940
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202309940
|3 Volltext
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|d 36
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