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240201s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202312250
|2 doi
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|a pubmed24n1284.xml
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|a (DE-627)NLM367895269
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|a (NLM)38300222
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Shin, Doyoon
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Growth Control of InP/ZnSe Heterostructured Nanocrystals
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 08.02.2024
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|a published: Print-Electronic
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|a Citation Status Publisher
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| 520 |
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|a © 2024 Wiley-VCH GmbH.
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|a The morphology of heterostructured semiconductor nanocrystals (h-NCs) dictates the spatial distribution of charge carriers and their recombination dynamics and/or transport, which are the main performance indicators of photonic applications utilizing h-NCs. The inability to control the morphology of heterovalent III-V/II-VI h-NCs composed of heavy-metal-free elements hinders their practical use. As a case study of III-V/II-VI h-NCs, the growth control of ZnSe epilayers on InP NCs is demonstrated here. The anisotropic morphology in InP/ZnSe h-NCs is attributed to the facet-dependent energy costs for the growth of ZnSe epilayers on different facets of InP NCs, and effective chemical means for controlling the growth rates of ZnSe on different surface planes are demonstrated. Ultimately, this article capitalizes on the controlled morphology of InP/ZnSe h-NCs to expand their photophysical characteristics from stable and pure emission to environment-sensitive one, which will facilitate their use in a variety of photonic applications
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|a Journal Article
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|a InP/ZnSe heterostructured nanocrystals
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|a carrier dynamics
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|a shape control
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|a surface energy
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1 |
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|a Lee, Hak June
|e verfasserin
|4 aut
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1 |
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|a Jung, Dongju
|e verfasserin
|4 aut
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|a Chae, Jong Ah
|e verfasserin
|4 aut
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|a Park, Jeong Woo
|e verfasserin
|4 aut
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|a Lim, Jaemin
|e verfasserin
|4 aut
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|a Im, Seongbin
|e verfasserin
|4 aut
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|a Min, Sejong
|e verfasserin
|4 aut
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| 700 |
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|a Hwang, Euyheon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Doh C
|e verfasserin
|4 aut
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| 700 |
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|a Park, Young-Shin
|e verfasserin
|4 aut
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| 700 |
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|a Chang, Jun Hyuk
|e verfasserin
|4 aut
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| 700 |
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|a Park, Kyoungwon
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Junki
|e verfasserin
|4 aut
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|a Park, Ji-Sang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bae, Wan Ki
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g (2024) vom: 01. Feb., Seite e2312250
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g year:2024
|g day:01
|g month:02
|g pages:e2312250
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|u http://dx.doi.org/10.1002/adma.202312250
|3 Volltext
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