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240201s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202311745
|2 doi
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|a pubmed24n1417.xml
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|a (DE-627)NLM367894866
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|a (NLM)38300183
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|a DE-627
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|a eng
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|a Artuk, Kerem
|e verfasserin
|4 aut
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|a A Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells and Perovskite-Silicon Tandems
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|c 2024
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|a Text
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 24.05.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.
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|a The primary performance limitation in inverted perovskite-based solar cells is the interface between the fullerene-based electron transport layers and the perovskite. Atomic layer deposited thin aluminum oxide (AlOX) interlayers that reduce nonradiative recombination at the perovskite/C60 interface are developed, resulting in >60 millivolts improvement in open-circuit voltage and 1% absolute improvement in power conversion efficiency. Surface-sensitive characterizations indicate the presence of a thin, conformally deposited AlOx layer, functioning as a passivating contact. These interlayers work universally using different lead-halide-based absorbers with different compositions where the 1.55 electron volts bandgap single junction devices reach >23% power conversion efficiency. A reduction of metallic Pb0 is found and the compact layer prevents in- and egress of volatile species, synergistically improving the stability. AlOX-modified wide-bandgap perovskite absorbers as a top cell in a monolithic perovskite-silicon tandem enable a certified power conversion efficiency of 29.9% and open-circuit voltages above 1.92 volts for 1.17 square centimeters device area
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|a Journal Article
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|a aluminum oxide
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|a perovskite solar cells
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| 650 |
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|a photovoltaics
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|a tandem solar cells
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|a Turkay, Deniz
|e verfasserin
|4 aut
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|a Mensi, Mounir D
|e verfasserin
|4 aut
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|a Steele, Julian A
|e verfasserin
|4 aut
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|a Jacobs, Daniel A
|e verfasserin
|4 aut
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|a Othman, Mostafa
|e verfasserin
|4 aut
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1 |
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|a Yu Chin, Xin
|e verfasserin
|4 aut
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|a Moon, Soo-Jin
|e verfasserin
|4 aut
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|a Tiwari, Ayodhya N
|e verfasserin
|4 aut
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|a Hessler-Wyser, Aïcha
|e verfasserin
|4 aut
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|a Jeangros, Quentin
|e verfasserin
|4 aut
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|a Ballif, Christophe
|e verfasserin
|4 aut
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|a Wolff, Christian M
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 21 vom: 24. Mai, Seite e2311745
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:21
|g day:24
|g month:05
|g pages:e2311745
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|u http://dx.doi.org/10.1002/adma.202311745
|3 Volltext
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