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240130s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202312157
|2 doi
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|a pubmed24n1468.xml
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|a (NLM)38288630
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|a DE-627
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|a eng
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|a Jiang, Yang
|e verfasserin
|4 aut
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|a Eliminating Non-Corner-Sharing Octahedral for Efficient and Stable Perovskite Solar Cells
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|c 2024
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|a Text
|b txt
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 12.07.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a The metal halide (BX6)4- octahedron, where B represents a metal cation and X represents a halide anion, is regarded as the fundamental structural and functional unit of metal halide perovskites. However, the influence of the way the (BX6)4- octahedra connect to each other has on the structural stability and optoelectronic properties of metal halide perovskite is still unclear. Here, the octahedral connectivity, including corner-, edge-, and face-sharing, of various CsxFA1-xPbI3 (0 ≤ x ≤ 0.3) perovskite films is tuned and reliably characterized through compositional and additive engineering, and with ultralow-dose transmission electron microscopy. It is found that the overall solar cell device performance, the charge carrier lifetime, the open-circuit voltage, and the current density-voltage hysteresis are all improved when the films consist of corner-sharing octahedra, and non-corner sharing phases are suppressed, even in films with the same chemical composition. Additionally, it is found that the structural, optoelectronic, and device performance stabilities are similarly enhanced when non-corner-sharing connectivities are suppressed. This approach, combining macroscopic device tests and microscopic material characterization, provides a powerful tool enabling a thorough understanding of the impact of octahedral connectivity on device performance, and opens a new parameter space for designing high-performance photovoltaic metal halide perovskite devices
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|a Journal Article
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|a metal halide perovskite solar cells
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|a octahedral connectivity
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|a ultralow‐dose transmission electron microscopy
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| 700 |
1 |
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|a Du, Hong-Qiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhi, Rui
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Rothmann, Mathias Uller
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yulong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Chao
|e verfasserin
|4 aut
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1 |
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|a Liang, Guijie
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Zhi-Yi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Yi-Bing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Wei
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 28 vom: 12. Juli, Seite e2312157
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:28
|g day:12
|g month:07
|g pages:e2312157
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|u http://dx.doi.org/10.1002/adma.202312157
|3 Volltext
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