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240127s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202310671
|2 doi
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|a pubmed24n1417.xml
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|a (DE-627)NLM367701928
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|a (NLM)38279779
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Kim, Seongchan
|e verfasserin
|4 aut
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| 245 |
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|a Colloidal Synthesis of P-Type Zn3As2 Nanocrystals
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 24.05.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Zinc pnictides, particularly Zn3As2, hold significant promise for optoelectronic applications owing to their intrinsic p-type behavior and appropriate bandgaps. However, despite the outstanding properties of colloidal Zn3As2 nanocrystals, research in this area is lacking because of the absence of suitable precursors, occurrence of surface oxidation, and intricacy of the crystal structures. In this study, a novel and facile solution-based synthetic approach is presented for obtaining highly crystalline p-type Zn3As2 nanocrystals with accurate stoichiometry. By carefully controlling the feed ratio and reaction temperature, colloidal Zn3As2 nanocrystals are successfully obtained. Moreover, the mechanism underlying the conversion of As precursors in the initial phases of Zn3As2 synthesis is elucidated. Furthermore, these nanocrystals are employed as active layers in field-effect transistors that exhibit inherent p-type characteristics with native surface ligands. To enhance the charge transport properties, a dual passivation strategy is introduced via phase-transfer ligand exchange, leading to enhanced hole mobilities as high as 0.089 cm2 V-1 s-1. This study not only contributes to the advancement of nanocrystal synthesis, but also opens up new possibilities for previously underexplored p-type nanocrystal research
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|a Journal Article
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|a FETs
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|a II–V semiconductors
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|a colloidal nanocrystals
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|a p‐type
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|a zinc arsenide
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|a Lee, Kyumin
|e verfasserin
|4 aut
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1 |
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|a Gwak, Namyoung
|e verfasserin
|4 aut
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|a Shin, Seungki
|e verfasserin
|4 aut
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|a Seo, Jaeyoung
|e verfasserin
|4 aut
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|a Noh, Sung Hoon
|e verfasserin
|4 aut
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|a Kim, Doyeon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Yunseo
|e verfasserin
|4 aut
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| 700 |
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|a Kong, Hyein
|e verfasserin
|4 aut
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| 700 |
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|a Yeo, Dongjoon
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Tae Ann
|e verfasserin
|4 aut
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| 700 |
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|a Lee, Seung-Yong
|e verfasserin
|4 aut
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| 700 |
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|a Jang, Jaeyoung
|e verfasserin
|4 aut
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| 700 |
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|a Oh, Nuri
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 21 vom: 19. Mai, Seite e2310671
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:21
|g day:19
|g month:05
|g pages:e2310671
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|u http://dx.doi.org/10.1002/adma.202310671
|3 Volltext
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