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240126s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202308984
|2 doi
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|a pubmed24n1395.xml
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|a (DE-627)NLM367619784
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|a (NLM)38271565
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Wang, Chenyang
|e verfasserin
|4 aut
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| 245 |
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|a Interlayer Biatomic Pair Bridging the van der Waals Gap for 100% Activation of 2D Layered Material
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 02.05.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a 2D layered materials are regarded as prospective catalyst candidates due to their advantageous atomic exposure ratio. Nevertheless, the predominant population of atoms residing on the basal plane with saturated coordination, exhibit inert behavior, while a mere fraction of atoms located at the periphery display reactivity. Here, a novel approach is reported to attain complete atom activation in 2D layered materials through the construction of an interlayer biatomic pair bridge. The atoms in question have been strategically optimized to achieve a highly favorable state for the adsorption of intermediates. This optimization results from the introduction of new gap states around the Fermi level. Moreover, the presence of the interlayer bridge facilitates the electron transfer across the van der Waals gap, thereby enhancing the reaction kinetics. The hydrogen evolution reaction exhibits an impressive ultrahigh current density of 2000 mA cm-2 at 397 mV, surpassing the pristine MoS2 by approximately two orders of magnitude (26 mA cm-2 at 397 mV). This study provides new insights for enhancing the efficacy of 2D layered catalysts
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|a Journal Article
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|a 2D layered material
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4 |
|a activated basal plane atoms
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4 |
|a biatomic pair
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| 650 |
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4 |
|a hydrogen evolution reaction
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4 |
|a interlayer conductivity
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1 |
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|a Yang, Wenxuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ding, Yiran
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bai, Pengfei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Ziyue
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lv, Haifeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Xiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Huiliu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zhouyang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zeng, Mengqi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wu, Xiaojun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fu, Lei
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 18 vom: 30. Mai, Seite e2308984
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:18
|g day:30
|g month:05
|g pages:e2308984
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|u http://dx.doi.org/10.1002/adma.202308984
|3 Volltext
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