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240125s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202312013
|2 doi
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|a pubmed24n1417.xml
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|a (DE-627)NLM367606690
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|a (NLM)38270245
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Ji, Yubin
|e verfasserin
|4 aut
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| 245 |
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|a Direct Observation of Room-Temperature Magnetic Skyrmion Motion Driven by Ultra-Low Current Density in Van Der Waals Ferromagnets
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 24.05.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.
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|a The recent discovery of room-temperature ferromagnetism in 2D van der Waals (vdW) materials, such as Fe3GaTe2 (FGaT), has garnered significant interest in offering a robust platform for 2D spintronic applications. Various fundamental operations essential for the realization of 2D spintronics devices are experimentally confirmed using these materials at room temperature, such as current-induced magnetization switching or tunneling magnetoresistance. Nevertheless, the potential applications of magnetic skyrmions in FGaT systems at room temperature remain unexplored. In this work, the current-induced generation of magnetic skyrmions in FGaT flakes employing high-resolution magnetic transmission soft X-ray microscopy is introduced, supported by a feasible mechanism based on thermal effects. Furthermore, direct observation of the current-induced magnetic skyrmion motion at room temperature in FGaT flakes is presented with ultra-low threshold current density. This work highlights the potential of FGaT as a foundation for room-temperature-operating 2D skyrmion device applications
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|a Journal Article
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|a 2D ferromagnets
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| 650 |
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4 |
|a skyrmion
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| 650 |
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4 |
|a spintronics
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| 700 |
1 |
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|a Yang, Seungmo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ahn, Hyo-Bin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Moon, Kyoung-Woong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ju, Tae-Seong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Im, Mi-Young
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Han, Hee-Sung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Jisung
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Park, Seung-Young
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Changgu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Kab-Jin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hwang, Chanyong
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 21 vom: 04. Mai, Seite e2312013
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:36
|g year:2024
|g number:21
|g day:04
|g month:05
|g pages:e2312013
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202312013
|3 Volltext
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