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240118s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202310291
|2 doi
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|a pubmed24n1373.xml
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|a (DE-627)NLM367264404
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|a (NLM)38235929
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Jeong, Juyeong
|e verfasserin
|4 aut
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|a Spin-Selective Memtransistors with Magnetized Graphene
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 11.04.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Spin-polarized bands in pristine and proximity-induced magnetic materials are promising building blocks for future devices. Conceptually new memory, logic, and neuromorphic devices are conceived based on atomically thin magnetic materials and the manipulation of their spin-polarized bands via electrical and optical methods. A critical remaining issue is the direct probe and the optimized use of the magnetic coupling effect in van der Waals heterostructures, which requires further delicate design of atomically thin magnetic materials and devices. Here, a spin-selective memtransistor with magnetized single-layered graphene on a reactive antiferromagnetic material, CrI3, is reported. The spin-dependent hybridization between graphene and CrI3 atomic layers enables the spin-selective bandgap opening in the single-layered graphene and the electric field control of magnetization in a specific CrI3 layer. The microscopic working principle is clarified by the first-principles calculations and theoretical analysis of the transport data. Reliable memtransistor operations (i.e., memory and logic device-combined operations), as well as a spin-selective probe of Landau levels in the magnetized graphene, are achieved by using the subtle manipulation of the magnetic proximity effect via electrical means
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|a Journal Article
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|a CrI3
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|a magnetized graphene
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|a memtransistor
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|a Kiem, Do Hoon
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guo, Dan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Duan, Ruihuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Watanabe, Kenji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Taniguchi, Takashi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Zheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Han, Myung Joon
|e verfasserin
|4 aut
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| 700 |
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|a Zheng, Shoujun
|e verfasserin
|4 aut
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| 700 |
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|a Yang, Heejun
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 15 vom: 18. Apr., Seite e2310291
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:15
|g day:18
|g month:04
|g pages:e2310291
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|u http://dx.doi.org/10.1002/adma.202310291
|3 Volltext
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