A Novel N-Type Molecular Dopant With a Closed-Shell Electronic Structure Applicable to the Vacuum-Deposition Process

© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 36(2024), 15 vom: 16. Apr., Seite e2311047
Auteur principal: Matsuo, Takaya (Auteur)
Autres auteurs: Kawabata, Kohsuke, Takimiya, Kazuo
Format: Article en ligne
Langue:English
Publié: 2024
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article contact resistance molecular design n‐type dopant n‐type organic field‐effect transistor n‐type organic thermoelectrics
LEADER 01000caa a22002652c 4500
001 NLM367178176
003 DE-627
005 20250305164042.0
007 cr uuu---uuuuu
008 240116s2024 xx |||||o 00| ||eng c
024 7 |a 10.1002/adma.202311047  |2 doi 
028 5 2 |a pubmed25n1223.xml 
035 |a (DE-627)NLM367178176 
035 |a (NLM)38227266 
040 |a DE-627  |b ger  |c DE-627  |e rakwb 
041 |a eng 
100 1 |a Matsuo, Takaya  |e verfasserin  |4 aut 
245 1 2 |a A Novel N-Type Molecular Dopant With a Closed-Shell Electronic Structure Applicable to the Vacuum-Deposition Process 
264 1 |c 2024 
336 |a Text  |b txt  |2 rdacontent 
337 |a ƒaComputermedien  |b c  |2 rdamedia 
338 |a ƒa Online-Ressource  |b cr  |2 rdacarrier 
500 |a Date Revised 11.04.2024 
500 |a published: Print-Electronic 
500 |a Citation Status PubMed-not-MEDLINE 
520 |a © 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH. 
520 |a Rational design, synthesis, and characterization of a new efficient versatile n-type dopant with a closed-shell electronic structure are described. By employing the tetraphenyl-dipyranylidene (DP0) framework with two 7π-electron systems modified with N,N-dimethylamino groups as the strong electron-donating substituent, 2,2',6,6'-tetrakis[4-(dimethylamino)phenyl]-4,4'-dipyranylidene (DP7), a closed-shell molecule with an extremely high-lying energy level of the highest occupied molecular orbital, close to 4.0 eV below the vacuum level, is successfully developed. Thanks to its thermal stability, DP7 is applicable to vacuum deposition, which allows utilization of DP7 in bulk doping for the development of n-type organic thermoelectric materials and contact doping for reducing contact resistance in n-type organic field-effect transistors. As vacuum-deposition processable n-type dopants are very limited, DP7 stands out as a useful n-type dopant, particularly for the latter purpose 
650 4 |a Journal Article 
650 4 |a contact resistance 
650 4 |a molecular design 
650 4 |a n‐type dopant 
650 4 |a n‐type organic field‐effect transistor 
650 4 |a n‐type organic thermoelectrics 
700 1 |a Kawabata, Kohsuke  |e verfasserin  |4 aut 
700 1 |a Takimiya, Kazuo  |e verfasserin  |4 aut 
773 0 8 |i Enthalten in  |t Advanced materials (Deerfield Beach, Fla.)  |d 1998  |g 36(2024), 15 vom: 16. Apr., Seite e2311047  |w (DE-627)NLM098206397  |x 1521-4095  |7 nnas 
773 1 8 |g volume:36  |g year:2024  |g number:15  |g day:16  |g month:04  |g pages:e2311047 
856 4 0 |u http://dx.doi.org/10.1002/adma.202311047  |3 Volltext 
912 |a GBV_USEFLAG_A 
912 |a SYSFLAG_A 
912 |a GBV_NLM 
912 |a GBV_ILN_350 
951 |a AR 
952 |d 36  |j 2024  |e 15  |b 16  |c 04  |h e2311047