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231229s2024 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202304338
|2 doi
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|a DE-627
|b ger
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|a eng
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|a Daw, Debottam
|e verfasserin
|4 aut
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| 245 |
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|a Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor
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|c 2024
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 28.03.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2024 Wiley‐VCH GmbH.
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|a Negative capacitance gives rise to subthreshold swing (SS) below the fundamental limit by efficient modulation of surface potential in transistors. While negative-capacitance transition is reported in polycrystalline Pb(Zr0.2Ti0.8)O3 (PZT) and HfZrO2 (HZO) thin-films in few microseconds timescale, low SS is not persistent over a wide range of drain current when used instead of conventional dielectrics. In this work, the clear nano-second negative transition states in 2D single-crystal CuInP2S6 (CIPS) flakes have been demonstrated by an alternative fast-transient measurement technique. Further, integrating this ultrafast NC transition with the localized density of states of Dirac contacts and controlled charge transfer in the CIPS/channel (MoS2/graphene) a state-of-the-art device architecture, negative capacitance Dirac source drain field effect transistor (FET) is introduced. This yields an ultralow SS of 4.8 mV dec-1 with an average sub-10 SS across five decades with on-off ratio exceeding 107, by simultaneous improvement of transport and body factors in monolayer MoS2-based FET, outperforming all previous reports. This approach could pave the way to achieve ultralow-SS FETs for future high-speed and low-power electronics
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|a Journal Article
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|a Dirac source
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|a negative capacitance
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|a subthreshold‐swing
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|a transient measurements
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|a van der Waals ferroelectrics
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1 |
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|a Bouzid, Houcine
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Jung, Moonyoung
|e verfasserin
|4 aut
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| 700 |
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|a Suh, Dongseok
|e verfasserin
|4 aut
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|a Biswas, Chandan
|e verfasserin
|4 aut
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| 700 |
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|a Hee Lee, Young
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 36(2024), 13 vom: 27. März, Seite e2304338
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:36
|g year:2024
|g number:13
|g day:27
|g month:03
|g pages:e2304338
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|u http://dx.doi.org/10.1002/adma.202304338
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